Parametric results for: BLW85 under RF Power Bipolar Transistors

All Filters Case Connection Collector Current-Max (IC) Collector-Base Capacitance-Max Collector-Emitter Voltage-Max Configuration DC Current Gain-Min (hFE) Highest Frequency Band JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Power Gain-Min (Gp) Surface Mount Transition Frequency-Nom (fT)

ISOLATED 1

5 hits Apply

Collector Current-Max (IC) (3)

5 A 1 9 A 2 22 A 2

Min (A) - Max (A)

5 hits Apply

135 pF 1

5 hits Apply

Collector-Emitter Voltage-Max (2)

16 V 2 18 V 1

Min (V) - Max (V)

5 hits Apply

Configuration (1)

SINGLE 5

5 hits Apply

DC Current Gain-Min (hFE) (1)

10.0 5

5 hits Apply

Highest Frequency Band (1)

VERY HIGH FREQUENCY BAND 3

5 hits Apply

O-CRFM-F4 2

5 hits Apply

e0 2

5 hits Apply

Manufacturer (5)

Advanced Semiconductor Inc 1 New Jersey Semiconductor Products Inc 1 North American Philips Discrete Products Div 1 NXP Semiconductors 1 Philips Semiconductors 1

5 hits Apply

Number of Elements (1)

1 5

5 hits Apply

Number of Terminals (1)

4 2

5 hits Apply

200.0 °C 4

5 hits Apply

CERAMIC, METAL-SEALED COFIRED 2

5 hits Apply

ROUND 2

5 hits Apply

FLANGE MOUNT 2

5 hits Apply

Active 2 Obsolete 1 Transferred 2

5 hits Apply

Polarity/Channel Type (1)

NPN 5

5 hits Apply

105 W 4

5 hits Apply

Power Gain-Min (Gp) (1)

4.5 dB 1

5 hits Apply

Surface Mount (2)

NO 3 YES 1

5 hits Apply

Transition Frequency-Nom (fT) (1)

650 MHz 2

5 hits Apply