Part Details for BSC016N03LSGATMA1 by Infineon Technologies AG
Overview of BSC016N03LSGATMA1 by Infineon Technologies AG
- Distributor Offerings: (15 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for BSC016N03LSGATMA1
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
BSC016N03LSGATMA1CT-ND
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DigiKey | MOSFET N-CH 30V 32A/100A TDSON Min Qty: 1 Lead time: 22 Weeks Container: Tape & Reel (TR), Digi-Reel®, Cut Tape (CT) |
4869 In Stock |
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$0.6964 / $1.6600 | Buy Now |
DISTI #
BSC016N03LSGATMA1
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Avnet Americas | Trans MOSFET N-CH 30V 100A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC016N03LSGATMA1) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 22 Weeks, 0 Days Container: Reel | 0 |
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$0.6500 / $0.7429 | Buy Now |
DISTI #
BSC016N03LSGATMA1
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Avnet Americas | Trans MOSFET N-CH 30V 100A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC016N03LSGATMA1) RoHS: Not Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 22 Weeks, 0 Days Container: Reel | 0 |
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$0.6500 / $0.7429 | Buy Now |
DISTI #
726-BSC016N03LSGATMA
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Mouser Electronics | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3 RoHS: Compliant | 692 |
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$0.6790 / $1.4300 | Buy Now |
DISTI #
V72:2272_06383408
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Arrow Electronics | Trans MOSFET N-CH 30V 32A 8-Pin TDSON EP T/R Min Qty: 1 Package Multiple: 1 Lead time: 98 Weeks Date Code: 2231 Container: Cut Strips | Americas - 13344 |
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$0.5954 / $0.6036 | Buy Now |
DISTI #
E02:0323_00046381
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Arrow Electronics | Trans MOSFET N-CH 30V 32A 8-Pin TDSON EP T/R Min Qty: 5000 Package Multiple: 5000 Lead time: 98 Weeks | Europe - 5000 |
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$0.6054 / $0.6145 | Buy Now |
DISTI #
62836311
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Verical | Trans MOSFET N-CH 30V 32A 8-Pin TDSON EP T/R Min Qty: 10 Package Multiple: 1 Date Code: 2231 | Americas - 13344 |
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$0.5954 / $0.6026 | Buy Now |
DISTI #
22129571
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Verical | Trans MOSFET N-CH 30V 32A 8-Pin TDSON EP T/R Min Qty: 5000 Package Multiple: 5000 | Americas - 5000 |
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$0.6041 / $0.6132 | Buy Now |
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Rochester Electronics | BSC016N03 - 12V-300V N-Channel Power MOSFET RoHS: Compliant Status: Not Recommended for New Designs Min Qty: 1 | 5000 |
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$0.6905 / $0.8124 | Buy Now |
DISTI #
BSC016N03LSGATMA1
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Avnet Americas | Trans MOSFET N-CH 30V 100A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC016N03LSGATMA1) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 22 Weeks, 0 Days Container: Reel | 0 |
|
$0.6500 / $0.7429 | Buy Now |
Part Details for BSC016N03LSGATMA1
BSC016N03LSGATMA1 CAD Models
BSC016N03LSGATMA1 Part Data Attributes:
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BSC016N03LSGATMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
BSC016N03LSGATMA1
Infineon Technologies AG
Power Field-Effect Transistor, 32A I(D), 30V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
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Pbfree Code | No | |
Rohs Code | Yes | |
Part Life Cycle Code | End Of Life | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | SMALL OUTLINE, R-PDSO-F8 | |
Pin Count | 8 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 22 Weeks | |
Samacsys Manufacturer | Infineon | |
Additional Feature | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | |
Avalanche Energy Rating (Eas) | 290 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 32 A | |
Drain-source On Resistance-Max | 0.0023 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-F8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 400 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for BSC016N03LSGATMA1
This table gives cross-reference parts and alternative options found for BSC016N03LSGATMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSC016N03LSGATMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
RS1E350BNTB | Power Field-Effect Transistor, 35A I(D), 30V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HSOP-8 | ROHM Semiconductor | BSC016N03LSGATMA1 vs RS1E350BNTB |