Part Details for BSC025N03MSG by Infineon Technologies AG
Overview of BSC025N03MSG by Infineon Technologies AG
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for BSC025N03MSG
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | Min Qty: 4 | 60 |
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$0.8531 / $1.3125 | Buy Now |
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Quest Components | 23 A, 30 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET | 48 |
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$0.8750 / $1.7500 | Buy Now |
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Chip 1 Exchange | INSTOCK | 2671 |
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RFQ |
Part Details for BSC025N03MSG
BSC025N03MSG CAD Models
BSC025N03MSG Part Data Attributes
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BSC025N03MSG
Infineon Technologies AG
Buy Now
Datasheet
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BSC025N03MSG
Infineon Technologies AG
Power Field-Effect Transistor, 23A I(D), 30V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | GREEN, PLASTIC, TDSON-8 | |
Pin Count | 8 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 135 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 23 A | |
Drain-source On Resistance-Max | 0.003 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-F8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 83 W | |
Pulsed Drain Current-Max (IDM) | 400 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for BSC025N03MSG
This table gives cross-reference parts and alternative options found for BSC025N03MSG. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSC025N03MSG, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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BSC882N03MSG | Power Field-Effect Transistor, 22A I(D), 34V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | BSC025N03MSG vs BSC882N03MSG |
BSC020N03MSG | Power Field-Effect Transistor, 25A I(D), 30V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | BSC025N03MSG vs BSC020N03MSG |
FDMS7682 | Power Field-Effect Transistor, 16A I(D), 30V, 0.0063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA, ROHS COMPLIANT, POWER 56, 8 PIN | Fairchild Semiconductor Corporation | BSC025N03MSG vs FDMS7682 |
BSC050NE2LS | Power Field-Effect Transistor, 60A I(D), 25V, 0.0076ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | BSC025N03MSG vs BSC050NE2LS |
BSC100N03MSGATMA1 | Power Field-Effect Transistor, 12A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | BSC025N03MSG vs BSC100N03MSGATMA1 |
BSC0902NSATMA1 | Power Field-Effect Transistor, 24A I(D), 30V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | BSC025N03MSG vs BSC0902NSATMA1 |
BSC043N03LSCG | Power Field-Effect Transistor, 16A I(D), 30V, 0.0067ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | BSC025N03MSG vs BSC043N03LSCG |
BSC057N03MSGATMA1 | Power Field-Effect Transistor, 15A I(D), 30V, 0.0072ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | BSC025N03MSG vs BSC057N03MSGATMA1 |
BSC0902NS | Power Field-Effect Transistor, 24A I(D), 30V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | BSC025N03MSG vs BSC0902NS |
BSC090N03MSG | Power Field-Effect Transistor, 12A I(D), 30V, 0.0112ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | BSC025N03MSG vs BSC090N03MSG |