Part Details for BSC036NE7NS3GXT by Infineon Technologies AG
Overview of BSC036NE7NS3GXT by Infineon Technologies AG
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for BSC036NE7NS3GXT
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
BSC036NE7NS3GATMA1
|
Avnet Americas | Trans MOSFET N-CH 75V 20A 8-Pin TDSON - Tape and Reel (Alt: BSC036NE7NS3GATMA1) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 18 Weeks, 0 Days Container: Reel | 5000 |
|
$1.4000 / $1.6000 | Buy Now |
|
DISTI #
BSC036NE7NS3GATMA1
|
Avnet Americas | Trans MOSFET N-CH 75V 20A 8-Pin TDSON - Tape and Reel (Alt: BSC036NE7NS3GATMA1) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 18 Weeks, 0 Days Container: Reel | 5000 |
|
$1.4000 / $1.6000 | Buy Now |
|
DISTI #
BSC036NE7NS3GATMA1
|
Avnet Americas | Trans MOSFET N-CH 75V 20A 8-Pin TDSON - Tape and Reel (Alt: BSC036NE7NS3GATMA1) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 18 Weeks, 0 Days Container: Reel | 5000 |
|
$1.4000 / $1.6000 | Buy Now |
Part Details for BSC036NE7NS3GXT
BSC036NE7NS3GXT CAD Models
BSC036NE7NS3GXT Part Data Attributes
|
|
BSC036NE7NS3GXT
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
BSC036NE7NS3GXT
Infineon Technologies AG
Power Field-Effect Transistor, 20A I(D), 75V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, SUPERSO8, TDSON-8
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SMALL OUTLINE, R-PDSO-F5 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 18 Weeks | |
| Avalanche Energy Rating (Eas) | 260 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 75 V | |
| Drain Current-Max (ID) | 20 A | |
| Drain-source On Resistance-Max | 0.0036 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-N8 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 400 A | |
| Surface Mount | YES | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for BSC036NE7NS3GXT
This table gives cross-reference parts and alternative options found for BSC036NE7NS3GXT. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSC036NE7NS3GXT, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| BSC042NE7NS3GATMA1 | Power Field-Effect Transistor, 19A I(D), 75V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | BSC036NE7NS3GXT vs BSC042NE7NS3GATMA1 |
| BSC042NE7NS3G | Power Field-Effect Transistor, 19A I(D), 75V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 | Infineon Technologies AG | BSC036NE7NS3GXT vs BSC042NE7NS3G |
| BSC036NE7NS3GATMA1 | Power Field-Effect Transistor, 20A I(D), 75V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, SUPERSO8, TDSON-8 | Infineon Technologies AG | BSC036NE7NS3GXT vs BSC036NE7NS3GATMA1 |
| BSB044N08NN3G | Power Field-Effect Transistor, 18A I(D), 80V, 0.0044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, METAL, WDSON-2, 3 PIN | Infineon Technologies AG | BSC036NE7NS3GXT vs BSB044N08NN3G |
| BSC036NE7NS3G | Power Field-Effect Transistor, 20A I(D), 75V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, SUPERSO8, TDSON-8 | Infineon Technologies AG | BSC036NE7NS3GXT vs BSC036NE7NS3G |
| BSC040N08NS5 | Power Field-Effect Transistor, 19A I(D), 80V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 | Infineon Technologies AG | BSC036NE7NS3GXT vs BSC040N08NS5 |
| BSB044N08NN3GXUMA1 | Power Field-Effect Transistor, 18A I(D), 80V, 0.0044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, METAL, WDSON-2, 3 PIN | Infineon Technologies AG | BSC036NE7NS3GXT vs BSB044N08NN3GXUMA1 |