Datasheets
BSC160N15NS5 by: Infineon Technologies AG

Power Field-Effect Transistor, 56A I(D), 150V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8

Part Details for BSC160N15NS5 by Infineon Technologies AG

Overview of BSC160N15NS5 by Infineon Technologies AG

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Applications Energy and Power Systems Medical Imaging Robotics and Drones

Price & Stock for BSC160N15NS5

Part # Distributor Description Stock Price Buy
Bristol Electronics   Min Qty: 2 302
  • 2 $2.7000
  • 9 $2.0250
  • 26 $1.6875
  • 90 $1.0125
  • 298 $0.9450
$0.9450 / $2.7000 Buy Now
Quest Components   241
  • 1 $3.6000
  • 112 $1.2600
  • 239 $1.1700
$1.1700 / $3.6000 Buy Now
DISTI # TMOS1713
Rutronik N-CH 150V 56A 16mOhm TDSON-8 RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Container: Reel Stock DE - 5000
Stock HK - 0
Stock US - 0
Stock SG - 0
  • 5,000 $1.2200
  • 10,000 $1.1600
  • 15,000 $0.9788
  • 20,000 $0.9264
$0.9264 / $1.2200 Buy Now
CHIPMALL.COM LIMITED MOSFET Pd96W Id56A Vdss150V N 132
  • 1 $2.7901
  • 10 $2.6688
$2.6688 / $2.7901 Buy Now
Chips Pulse Industry Limited N-Channel 150V 56A(Tc) 4.6V @ 60uA 16mohms @ 28A 10V 96W(Tc) TDSON-8 MOSFETs RoHS Purchase Online, Ship Immediately 603
  • 30 $1.4705
  • 100 $1.0676
  • 500 $1.0004
  • 1,000 $0.9723
$0.9723 / $1.4705 Buy Now
LCSC 150V 56A 96W 16m10V28A 4.6V60uA 1PCSNChannel TDSON-8(5.9x5.2) MOSFETs ROHS 483
  • 1 $2.0501
  • 10 $1.7935
  • 30 $1.6339
  • 100 $1.1862
  • 500 $1.1116
  • 1,000 $1.0803
$1.0803 / $2.0501 Buy Now

Part Details for BSC160N15NS5

BSC160N15NS5 CAD Models

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BSC160N15NS5 Part Data Attributes

BSC160N15NS5 Infineon Technologies AG
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BSC160N15NS5 Infineon Technologies AG Power Field-Effect Transistor, 56A I(D), 150V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 43 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 150 V
Drain Current-Max (ID) 56 A
Drain-source On Resistance-Max 0.016 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-F5
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 5
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 224 A
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for BSC160N15NS5

This table gives cross-reference parts and alternative options found for BSC160N15NS5. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSC160N15NS5, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BSC190N15NS3G Power Field-Effect Transistor, 50A I(D), 150V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 Infineon Technologies AG BSC160N15NS5 vs BSC190N15NS3G
BSC190N15NS3GATMA1 Power Field-Effect Transistor, 50A I(D), 150V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 Infineon Technologies AG BSC160N15NS5 vs BSC190N15NS3GATMA1
SIR622DP-T1-GE3 Power Field-Effect Transistor, Vishay Intertechnologies BSC160N15NS5 vs SIR622DP-T1-GE3
BSC160N15NS5ATMA1 Power Field-Effect Transistor, 56A I(D), 150V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 Infineon Technologies AG BSC160N15NS5 vs BSC160N15NS5ATMA1
Part Number Description Manufacturer Compare
SIDR622DP-T1-GE3 Power Field-Effect Transistor, 56.7A I(D), 150V, 0.0177ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8DC, 8 PIN Vishay Intertechnologies BSC160N15NS5 vs SIDR622DP-T1-GE3
BSC190N15NS3GATMA1 Power Field-Effect Transistor, 50A I(D), 150V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 Infineon Technologies AG BSC160N15NS5 vs BSC190N15NS3GATMA1
BSC160N15NS5ATMA1 Power Field-Effect Transistor, 56A I(D), 150V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 Infineon Technologies AG BSC160N15NS5 vs BSC160N15NS5ATMA1
SIR622DP-T1-GE3 Power Field-Effect Transistor, Vishay Intertechnologies BSC160N15NS5 vs SIR622DP-T1-GE3
BSC190N15NS3G Power Field-Effect Transistor, 50A I(D), 150V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8 Infineon Technologies AG BSC160N15NS5 vs BSC190N15NS3G

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