Part Details for BSO200N03 by Infineon Technologies AG
Overview of BSO200N03 by Infineon Technologies AG
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for BSO200N03
| Part # | Distributor | Description | Stock | Price | Buy | |
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Rochester Electronics | BSO200N03 - Small Signal Field-Effect Transistor, 6.6A, 30V, 2-Element, N-Channel, MOSFET RoHS: Compliant Status: Obsolete Min Qty: 1 | 357 |
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$0.4463 / $0.5250 | Buy Now |
Part Details for BSO200N03
BSO200N03 CAD Models
BSO200N03 Part Data Attributes
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BSO200N03
Infineon Technologies AG
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Datasheet
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BSO200N03
Infineon Technologies AG
Small Signal Field-Effect Transistor, 6.6A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012, GREEN, PLASTIC, SOP-8
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | SOIC | |
| Package Description | SMALL OUTLINE, R-PDSO-G8 | |
| Pin Count | 8 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | AVALANCHE RATED | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 6.6 A | |
| Drain-source On Resistance-Max | 0.02 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 56 pF | |
| JEDEC-95 Code | MS-012 | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 3 | |
| Number of Elements | 2 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 2 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for BSO200N03
This table gives cross-reference parts and alternative options found for BSO200N03. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSO200N03, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| FDW2504P | Small Signal Field-Effect Transistor, 3.8A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-153AA, TSSOP-8 | Fairchild Semiconductor Corporation | BSO200N03 vs FDW2504P |
| FDS4410_NL | Small Signal Field-Effect Transistor, 10A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 | Fairchild Semiconductor Corporation | BSO200N03 vs FDS4410_NL |
| NDS9947/L99Z | 3500mA, 20V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET | Texas Instruments | BSO200N03 vs NDS9947/L99Z |
| LS-U257-SOIC | Small Signal Field-Effect Transistor, SOIC-8 | Linear Integrated Systems | BSO200N03 vs LS-U257-SOIC |
| FY10AAJ-03A | 10000mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET | Renesas Electronics Corporation | BSO200N03 vs FY10AAJ-03A |
| STS3DPFS30 | 3000mA, 30V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SO-8 | STMicroelectronics | BSO200N03 vs STS3DPFS30 |
| SI4114DY-T1-E3 | Small Signal Field-Effect Transistor, 15.2A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOP-8 | Vishay Intertechnologies | BSO200N03 vs SI4114DY-T1-E3 |
| FDS4410L86Z | Small Signal Field-Effect Transistor, 10A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 | Fairchild Semiconductor Corporation | BSO200N03 vs FDS4410L86Z |
| SI9407BDY-T1-E3 | TRANSISTOR 4700 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA, ROHS COMPLIANT, MS-012, SOIC-8, FET General Purpose Small Signal | Vishay Siliconix | BSO200N03 vs SI9407BDY-T1-E3 |
| NDH8502P/L86Z | 2300mA, 30V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET | Texas Instruments | BSO200N03 vs NDH8502P/L86Z |