BSP298H6327XUSA1
Infineon Technologies AG
Description: Power Field-Effect Transistor, 0.5A I(D), 400V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4

Overview of BSP298H6327XUSA1 by Infineon Technologies AG

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
  • Distributor Offerings: ( 3 listings )
  • Number of FFF Equivalents: ( 0 replacements )
  • CAD Models: ( Request Part )
  • Number of Functional Equivalents: ( 0 options )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )
Where used in Applications: Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for BSP298H6327XUSA1 by Infineon Technologies AG

Part # Manufacturer Description Stock Price Buy
DISTI # BSP298H6327XUSA1
Avnet Americas Trans MOSFET N-CH 400V 0.5A 4-Pin SOT-223 T/R - Tape and Reel (Alt: BSP298H6327XUSA1) RoHS: Compliant Min Qty: 200 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Reel 81350 Partner Stock
  • 1 $1.8200
  • 25 $1.7900
  • 100 $1.7100
  • 500 $1.6400
  • 1,000 $1.5500
$1.5500 / $1.8200 Buy Now
Rochester Electronics BSP298 - SIPMOS SMALL-SIGNAL TRANSISTOR RoHS: Compliant Status: Obsolete Min Qty: 1 Call for Availability
  • 1 $1.8200
  • 25 $1.7900
  • 100 $1.7100
  • 500 $1.6400
  • 1,000 $1.5500
$1.5500 / $1.8200 Buy Now
Chip 1 Exchange INSTOCK 1853
RFQ

CAD Models for BSP298H6327XUSA1 by Infineon Technologies AG
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Part Data Attributes for BSP298H6327XUSA1 by Infineon Technologies AG

BSP298H6327XUSA1
Infineon Technologies AG
-
-
Pbfree Code
Yes
Rohs Code
Yes
Part Life Cycle Code
Obsolete
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
Package Description
SMALL OUTLINE, R-PDSO-G4
Pin Count
4
Reach Compliance Code
compliant
ECCN Code
EAR99
Factory Lead Time
4 Weeks
Samacsys Manufacturer
Infineon
Additional Feature
AVALANCHE RATED
Avalanche Energy Rating (Eas)
130 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
400 V
Drain Current-Max (ID)
0.5 A
Drain-source On Resistance-Max
3 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PDSO-G4
JESD-609 Code
e3
Moisture Sensitivity Level
3
Number of Elements
1
Number of Terminals
4
Operating Mode
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
N-CHANNEL
Pulsed Drain Current-Max (IDM)
2 A
Reference Standard
AEC-Q101
Surface Mount
YES
Terminal Finish
Matte Tin (Sn)
Terminal Form
GULL WING
Terminal Position
DUAL
Time@Peak Reflow Temperature-Max (s)
40
Transistor Element Material
SILICON
Want to compare parts?
  1. BSP298H6327XUSA1
    Infineon Technologies AG
    Power Field-Effect Transistor, 0.5A I(D), 400V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-4
    VS

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