Parametric results for: BSP298H6327XUSA1 under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Surface Mount

AVALANCHE RATED 1

1 hit Apply

130.0 mJ 1

1 hit Apply

DRAIN 1

1 hit Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 1

1 hit Apply

DS Breakdown Voltage-Min (1)

400 V 1

1 hit Apply

Drain Current-Max (ID) (1)

500 mA 1

1 hit Apply

Drain-source On Resistance-Max (1)

3 Ω 1

1 hit Apply

METAL-OXIDE SEMICONDUCTOR 1

1 hit Apply

R-PDSO-G4 1

1 hit Apply

e3 1

1 hit Apply

Manufacturer (1)

Infineon Technologies AG 1

1 hit Apply

3 1

1 hit Apply

Number of Elements (1)

1 1

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Number of Terminals (1)

4 1

1 hit Apply

ENHANCEMENT MODE 1

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PLASTIC/EPOXY 1

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RECTANGULAR 1

1 hit Apply

SMALL OUTLINE 1

1 hit Apply

Obsolete 1

1 hit Apply

Yes 1

1 hit Apply

260 1

1 hit Apply

Polarity/Channel Type (1)

N-CHANNEL 1

1 hit Apply

Surface Mount (1)

YES 1

1 hit Apply