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Transistors Small Signal Field-Effect Transistors BSS123,215

Transistors
BSS123,215
Description: BSS123 - 100 V, N-channel Trench MOSFET@en-us TO-236 3-Pin

Overview of BSS123,215 by Nexperia

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Price & Stock for BSS123,215 by Nexperia

Part # Manufacturer Description Stock Price Buy
DISTI # 97W1930
Newark Mosfet, N-Ch, 130V, 0.15A, 0.25W, Sot-23, Channel Type:N Channel, Drain Source Voltage Vds:130V, Continuous Drain Current Id:150Ma, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2V Rohs Compliant: Yes |Nexperia BSS123,215 RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel 561000
  • 3,000 $0.0520
  • 6,000 $0.0500
  • 12,000 $0.0430
$0.0430 / $0.0520 Buy Now
DISTI # 34AH6902
Newark Bss123/Sot23/To-236Ab Rohs Compliant: Yes |Nexperia BSS123,215 RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 3,000 $0.0590
  • 6,000 $0.0560
  • 12,000 $0.0530
$0.0530 / $0.0590 Buy Now
DISTI # BSS123,215
Avnet Americas Power MOSFET, N Channel, 100 V, 150 mA, 6 Ohm, SOT-23, 3 Pins, Surface Mount - Tape and Reel (Alt: BSS123,215) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Container: Reel 36000
  • 3,000 $0.0488
$0.0488 Buy Now
DISTI # BSS123,215
Avnet Americas Power MOSFET, N Channel, 100 V, 150 mA, 6 Ohm, SOT-23, 3 Pins, Surface Mount - Tape and Reel (Alt: BSS123,215) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Reel 153 Partner Stock
RFQ
DISTI # BSS123,215
Avnet Americas Power MOSFET, N Channel, 100 V, 150 mA, 6 Ohm, SOT-23, 3 Pins, Surface Mount - Tape and Reel (Alt: BSS123,215) RoHS: Compliant Min Qty: 30000 Package Multiple: 3000 Container: Reel 0
RFQ
Bristol Electronics   Min Qty: 34 1130
  • 34 $0.1500
  • 101 $0.0750
  • 668 $0.0450
$0.0450 / $0.1500 Buy Now
DISTI # BSS123.215
TME Transistor: N-MOSFET, unipolar, 100V, 0.15A, 250mW, SOT23,TO236AB Min Qty: 1 10156
  • 1 $0.2015
  • 10 $0.1458
  • 50 $0.0927
  • 100 $0.0756
  • 500 $0.0503
  • 1,500 $0.0412
  • 3,000 $0.0374
  • 6,000 $0.0348
  • 9,000 $0.0336
  • 24,000 $0.0327
$0.0327 / $0.2015 Buy Now
DISTI # BSS123,215
Avnet Asia Power MOSFET, N Channel, 100 V, 150 mA, 6 Ohm, SOT-23, 3 Pins, Surface Mount (Alt: BSS123,215) RoHS: Compliant Min Qty: 30000 Package Multiple: 3000 Lead time: 6 Weeks, 0 Days 90000
  • 30,000 $0.1854
  • 60,000 $0.1801
  • 90,000 $0.1749
  • 150,000 $0.1481
  • 300,000 $0.0944
  • 750,000 $0.0735
  • 1,500,000 $0.0525
$0.0525 / $0.1854 Buy Now
Chip Stock   4814
RFQ
DISTI # C1S537100356622
Chip1Stop BSS123/SOT23/TO-236AB RoHS: Compliant pbFree: Yes 2667
  • 1,701 $0.0616
$0.0616 Buy Now
DISTI # C1S537100363507
Chip1Stop BSS123/SOT23/TO-236AB RoHS: Compliant pbFree: Yes 912
  • 1 $1.0900
  • 100 $0.1850
  • 500 $0.0894
$0.0894 / $1.0900 Buy Now
New Advantage Corporation BSS123 Series 100 V 6 O 25 mW N-Channel TrenchMOS Logic Level FET - SOT-23 RoHS: Compliant Min Qty: 1 Package Multiple: 3000 2742000
  • 6,000 $0.0356
  • 2,742,000 $0.0332
$0.0332 / $0.0356 Buy Now

CAD Models for BSS123,215 by Nexperia
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Part Data Attributes for BSS123,215 by Nexperia
Parametric Data

BSS123,215
Nexperia
Buy Now
-
-
Rohs Code
Yes
Part Life Cycle Code
Not Recommended
Ihs Manufacturer
NEXPERIA
Part Package Code
TO-236
Pin Count
3
Manufacturer Package Code
SOT23
Reach Compliance Code
compliant
ECCN Code
EAR99
Date Of Intro
2017-02-01
Samacsys Manufacturer
Nexperia
Additional Feature
LOGIC LEVEL COMPATIBLE
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
100 V
Drain Current-Max (ID)
0.15 A
Drain-source On Resistance-Max
6 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)
10 pF
JESD-30 Code
R-PDSO-G3
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Operating Temperature-Min
-55 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
N-CHANNEL
Power Dissipation Ambient-Max
0.25 W
Power Dissipation-Max (Abs)
0.25 W
Reference Standard
IEC-134
Surface Mount
YES
Terminal Finish
TIN
Terminal Form
GULL WING
Terminal Position
DUAL
Time@Peak Reflow Temperature-Max (s)
30
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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    BSS123 - 100 V, N-channel Trench MOSFET@en-us TO-236 3-Pin
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Alternate Parts for BSS123,215

This table gives cross-reference parts and alternative options found for BSS123,215. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSS123,215, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
933946340215 Small Signal Field-Effect Transistor Nexperia BSS123,215 vs 933946340215
BSS123,215 BSS123 - N-channel TrenchMOS logic level FET TO-236 3-Pin NXP Semiconductors BSS123,215 vs BSS123,215
BSS123-TAPE-7 TRANSISTOR 150 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Signal NXP Semiconductors BSS123,215 vs BSS123-TAPE-7
BSS123 Small Signal Field-Effect Transistor, 0.15A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Nexperia BSS123,215 vs BSS123
BSS123TRL13 TRANSISTOR 150 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Signal NXP Semiconductors BSS123,215 vs BSS123TRL13
BSS123 150mA, 100V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, PLASTIC PACKAGE-3 NXP Semiconductors BSS123,215 vs BSS123
BSS123235 TRANSISTOR 150 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Signal NXP Semiconductors BSS123,215 vs BSS123235
BSS123T/R Small Signal Field-Effect Transistor Nexperia BSS123,215 vs BSS123T/R
BSS123-TAPE-13 TRANSISTOR 150 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Signal NXP Semiconductors BSS123,215 vs BSS123-TAPE-13
Part Number Description Manufacturer Compare
TP0604N3-GP003 SMALL SIGNAL, FET Microchip Technology Inc BSS123,215 vs TP0604N3-GP003
RJP020N06T100 Small Signal Field-Effect Transistor, 2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MPT3, 3 PIN ROHM Semiconductor BSS123,215 vs RJP020N06T100
RQK0604IGDQATL-E 2000mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SC-59A, MPAK-3 Renesas Electronics Corporation BSS123,215 vs RQK0604IGDQATL-E
2N7002 Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN Samsung Semiconductor BSS123,215 vs 2N7002
2N7002 Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN Diodes Incorporated BSS123,215 vs 2N7002
2SK163 Small Signal Field-Effect Transistor, 0.03A I(D), 1-Element, N-Channel, Silicon, Junction FET, TO-92, NEC Electronics America Inc BSS123,215 vs 2SK163
2SK1839-TL Small Signal Field-Effect Transistor, 0.1A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET SANYO Semiconductor Co Ltd BSS123,215 vs 2SK1839-TL
2SK303TB Small Signal Field-Effect Transistor, 0.02A I(D), 30V, 1-Element, N-Channel, Silicon, Junction FET, CP, 3 PIN SANYO Electric Co Ltd BSS123,215 vs 2SK303TB
2SK105J Small Signal Field-Effect Transistor, 0.02A I(D), 1-Element, N-Channel, Silicon, Junction FET, TO-92, NEC Electronics America Inc BSS123,215 vs 2SK105J
TP0604N3-GP002 SMALL SIGNAL, FET Microchip Technology Inc BSS123,215 vs TP0604N3-GP002

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