Datasheets
BSS123E-6327 by:

170mA, 100V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SOT-23, 3 PIN

Part Details for BSS123E-6327 by Infineon Technologies AG

Overview of BSS123E-6327 by Infineon Technologies AG

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Available Datasheets

Part # Manufacturer Description Datasheet
GP-IE156327SS-006 Amphenol Cables on Demand Amphenol GP-IE156327SS-006 Shielded GPIB Cable (IEEE-488 Cable) w/ Stackable GPIB Connectors (24-pin M/F) 6m
GP-IE156327SS-003 Amphenol Cables on Demand Amphenol GP-IE156327SS-003 Shielded GPIB Cable (IEEE-488 Cable) w/ Stackable GPIB Connectors (24-pin M/F) 3m
GP-IE156327SS-000.5 Amphenol Cables on Demand Amphenol GP-IE156327SS-000.5 Shielded GPIB Cable (IEEE-488 Cable) w/ Stackable GPIB Connectors (24-pin M/F) 0.5m

Part Details for BSS123E-6327

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BSS123E-6327 Part Data Attributes

BSS123E-6327 Infineon Technologies AG
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BSS123E-6327 Infineon Technologies AG 170mA, 100V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SOT-23, 3 PIN
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Part Package Code SOT-23
Package Description SMALL OUTLINE, R-PDSO-G3
Pin Count 3
Reach Compliance Code compliant
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (Abs) (ID) 0.17 A
Drain Current-Max (ID) 0.17 A
Drain-source On Resistance-Max 10 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 6 pF
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 0.36 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40
Transistor Element Material SILICON

Alternate Parts for BSS123E-6327

This table gives cross-reference parts and alternative options found for BSS123E-6327. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSS123E-6327, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
933946340215 TRANSISTOR 150 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, PLASTIC, SMD, 3 PIN, FET General Purpose Small Signal NXP Semiconductors BSS123E-6327 vs 933946340215
BSS123E6433 Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN Siemens BSS123E-6327 vs BSS123E6433
BSS123LT3 170mA, 100V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, CASE 318-08, 3 PIN onsemi BSS123E-6327 vs BSS123LT3
BSS123TC 170mA, 100V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET Diodes Incorporated BSS123E-6327 vs BSS123TC
BSS123/S62Z TRANSISTOR 170 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, FET General Purpose Small Signal National Semiconductor Corporation BSS123E-6327 vs BSS123/S62Z
BSS123L6433 Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 Infineon Technologies AG BSS123E-6327 vs BSS123L6433
BSS123 Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOT-23, 3 PIN Infineon Technologies AG BSS123E-6327 vs BSS123
BSS123_NL Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN Fairchild Semiconductor Corporation BSS123E-6327 vs BSS123_NL
BSS123L6327XT Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 Infineon Technologies AG BSS123E-6327 vs BSS123L6327XT
BSS123TC Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, Zetex / Diodes Inc BSS123E-6327 vs BSS123TC
Part Number Description Manufacturer Compare
2SK3335TP 8000mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TP, 3 PIN SANYO Electric Co Ltd BSS123E-6327 vs 2SK3335TP
VN2210N2 Small Signal Field-Effect Transistor, 1.7A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39, TO-39, 3 PIN Supertex Inc BSS123E-6327 vs VN2210N2
BST82 175mA, 80V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET NXP Semiconductors BSS123E-6327 vs BST82
FDA24N50F Small Signal Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, TO-3PN, 3 PIN Fairchild Semiconductor Corporation BSS123E-6327 vs FDA24N50F
FDN359BN Small Signal Field-Effect Transistor, 2.7A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3 Fairchild Semiconductor Corporation BSS123E-6327 vs FDN359BN
VP0210N2 Small Signal Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET, TO-39, TO-39, 3 PIN Supertex Inc BSS123E-6327 vs VP0210N2
TN2106K1-G Small Signal Field-Effect Transistor, 0.28A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, 2.90 X 1.30 MM, 1.12 MM HEIGHT, GREEN PACKAGE-3 Supertex Inc BSS123E-6327 vs TN2106K1-G
TP2104K1-G Small Signal Field-Effect Transistor, 0.16A I(D), 40V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, 2.90 X 1.30 MM, 1.12 MM HEIGHT, GREEN PACKAGE-3 Supertex Inc BSS123E-6327 vs TP2104K1-G
BS170 Small Signal Field-Effect Transistor, 0.5A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, TO-92, 3 PIN Fairchild Semiconductor Corporation BSS123E-6327 vs BS170
TP0606N3-G Small Signal Field-Effect Transistor, 0.32A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, GREEN PACKAGE-3 Supertex Inc BSS123E-6327 vs TP0606N3-G

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