Part Details for BSS123E-6327 by Infineon Technologies AG
Overview of BSS123E-6327 by Infineon Technologies AG
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Available Datasheets
Part # | Manufacturer | Description | Datasheet |
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GP-IE156327SS-006 | Amphenol Cables on Demand | Amphenol GP-IE156327SS-006 Shielded GPIB Cable (IEEE-488 Cable) w/ Stackable GPIB Connectors (24-pin M/F) 6m | |
GP-IE156327SS-003 | Amphenol Cables on Demand | Amphenol GP-IE156327SS-003 Shielded GPIB Cable (IEEE-488 Cable) w/ Stackable GPIB Connectors (24-pin M/F) 3m | |
GP-IE156327SS-000.5 | Amphenol Cables on Demand | Amphenol GP-IE156327SS-000.5 Shielded GPIB Cable (IEEE-488 Cable) w/ Stackable GPIB Connectors (24-pin M/F) 0.5m |
Part Details for BSS123E-6327
BSS123E-6327 CAD Models
BSS123E-6327 Part Data Attributes
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BSS123E-6327
Infineon Technologies AG
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Datasheet
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BSS123E-6327
Infineon Technologies AG
170mA, 100V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SOT-23, 3 PIN
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Part Package Code | SOT-23 | |
Package Description | SMALL OUTLINE, R-PDSO-G3 | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (Abs) (ID) | 0.17 A | |
Drain Current-Max (ID) | 0.17 A | |
Drain-source On Resistance-Max | 10 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 6 pF | |
JESD-30 Code | R-PDSO-G3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 0.36 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 40 | |
Transistor Element Material | SILICON |
Alternate Parts for BSS123E-6327
This table gives cross-reference parts and alternative options found for BSS123E-6327. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSS123E-6327, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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933946340215 | TRANSISTOR 150 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, PLASTIC, SMD, 3 PIN, FET General Purpose Small Signal | NXP Semiconductors | BSS123E-6327 vs 933946340215 |
BSS123E6433 | Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN | Siemens | BSS123E-6327 vs BSS123E6433 |
BSS123LT3 | 170mA, 100V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, CASE 318-08, 3 PIN | onsemi | BSS123E-6327 vs BSS123LT3 |
BSS123TC | 170mA, 100V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET | Diodes Incorporated | BSS123E-6327 vs BSS123TC |
BSS123/S62Z | TRANSISTOR 170 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, FET General Purpose Small Signal | National Semiconductor Corporation | BSS123E-6327 vs BSS123/S62Z |
BSS123L6433 | Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | BSS123E-6327 vs BSS123L6433 |
BSS123 | Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOT-23, 3 PIN | Infineon Technologies AG | BSS123E-6327 vs BSS123 |
BSS123_NL | Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN | Fairchild Semiconductor Corporation | BSS123E-6327 vs BSS123_NL |
BSS123L6327XT | Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | BSS123E-6327 vs BSS123L6327XT |
BSS123TC | Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | Zetex / Diodes Inc | BSS123E-6327 vs BSS123TC |