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Transistors / Small Signal Field-Effect Transistors / BSS123IXTSA1
Datasheets
BSS123IXTSA1 by: Infineon Technologies AG

Small Signal Field-Effect Transistor, 0.19A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN

Part Details for BSS123IXTSA1 by Infineon Technologies AG

Overview of BSS123IXTSA1 by Infineon Technologies AG

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Price & Stock for BSS123IXTSA1

Part # Distributor Description Stock Price Buy
DISTI # 40AJ6235
Newark Mosfet, N-Ch, 100V, 0.19A, Sot-23 Rohs Compliant: Yes |Infineon BSS123IXTSA1 Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape 1920
  • 1 $0.3710
  • 10 $0.2580
  • 25 $0.2160
  • 50 $0.1720
  • 100 $0.1300
  • 250 $0.1190
  • 500 $0.1090
  • 1,000 $0.0780
$0.0780 / $0.3710 Buy Now
DISTI # 86AK4524
Newark Mosfet, N-Ch, 100V, 0.19A, Sot-23 Rohs Compliant: Yes |Infineon BSS123IXTSA1 Min Qty: 3000 Package Multiple: 1 Date Code: 1 Container: Reel 0
  • 3,000 $0.0590
  • 6,000 $0.0570
  • 12,000 $0.0470
  • 18,000 $0.0470
  • 30,000 $0.0460
$0.0460 / $0.0590 Buy Now
DISTI # 448-BSS123IXTSA1CT-ND
DigiKey SMALL SIGNAL MOSFETS PG-SOT23-3 Min Qty: 1 Lead time: 22 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) 13515
In Stock
  • 1 $0.3200
  • 10 $0.2190
  • 100 $0.1067
  • 500 $0.0890
  • 1,000 $0.0618
  • 3,000 $0.0536
  • 6,000 $0.0497
  • 9,000 $0.0412
  • 30,000 $0.0405
  • 75,000 $0.0364
  • 150,000 $0.0315
$0.0315 / $0.3200 Buy Now
DISTI # BSS123IXTSA1
Avnet Americas Power MOSFET, N Channel, 100 V, 190 mA, 2.4 ohm, SOT-23, Surface Mount - Tape and Reel (Alt: BSS123IXTSA1) RoHS: Compliant Min Qty: 15000 Package Multiple: 3000 Lead time: 20 Weeks, 0 Days Container: Reel 0
  • 15,000 $0.0320
  • 21,000 $0.0310
  • 36,000 $0.0300
  • 75,000 $0.0290
  • 150,000 $0.0280
$0.0280 / $0.0320 Buy Now
DISTI # 726-BSS123IXTSA1
Mouser Electronics MOSFET SMALL SIGNAL MOSFETS RoHS: Compliant 40348
  • 1 $0.3200
  • 10 $0.2190
  • 100 $0.0890
  • 1,000 $0.0620
  • 3,000 $0.0490
  • 9,000 $0.0410
  • 24,000 $0.0380
  • 45,000 $0.0360
  • 99,000 $0.0310
$0.0310 / $0.3200 Buy Now
DISTI # 73928898
RS Transistor, MOSFET, N-channel, small signal, 100V, 0.19A, enhancement mode | Infineon BSS123IXTSA1 RoHS: Compliant Min Qty: 100 Package Multiple: 1 Lead time: 2 Weeks, 0 Days Container: Bulk 0
  • 100 $0.0430
$0.0430 RFQ
Future Electronics MOSFET SMALL SIGNAL MOSFETS RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel 0
Reel
  • 3,000 $0.0406
  • 9,000 $0.0391
  • 15,000 $0.0384
  • 45,000 $0.0370
  • 75,000 $0.0357
$0.0357 / $0.0406 Buy Now
Future Electronics MOSFET SMALL SIGNAL MOSFETS RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel 0
Reel
  • 3,000 $0.0406
  • 9,000 $0.0391
  • 15,000 $0.0384
  • 45,000 $0.0370
  • 75,000 $0.0357
$0.0357 / $0.0406 Buy Now
Rochester Electronics BSS123I - SMALL SIGNAL MOSFETS RoHS: Compliant Status: Active Min Qty: 1 405000
  • 1 $0.0350
  • 25 $0.0343
  • 100 $0.0329
  • 500 $0.0315
  • 1,000 $0.0298
$0.0298 / $0.0350 Buy Now
DISTI # BSS123IXTSA1
Avnet Americas Power MOSFET, N Channel, 100 V, 190 mA, 2.4 ohm, SOT-23, Surface Mount - Tape and Reel (Alt: BSS123IXTSA1) RoHS: Compliant Min Qty: 15000 Package Multiple: 3000 Lead time: 20 Weeks, 0 Days Container: Reel 0
  • 15,000 $0.0320
  • 21,000 $0.0310
  • 36,000 $0.0300
  • 75,000 $0.0290
  • 150,000 $0.0280
$0.0280 / $0.0320 Buy Now
DISTI # BSS123IXTSA1
TME Transistor: N-MOSFET, unipolar, 100V, 0.15A, Idm: 0.77A, 0.5W, SOT23 Min Qty: 10 2690
  • 10 $0.0749
  • 50 $0.0546
  • 250 $0.0483
  • 1,000 $0.0434
  • 3,000 $0.0405
$0.0405 / $0.0749 Buy Now
Ameya Holding Limited   Min Qty: 800 4500
  • 800 $0.1125
  • 1,500 $0.1098
$0.1098 / $0.1125 Buy Now
Ameya Holding Limited   20174
RFQ
DISTI # BSS123IXTSA1
Avnet Americas Power MOSFET, N Channel, 100 V, 190 mA, 2.4 ohm, SOT-23, Surface Mount - Tape and Reel (Alt: BSS123IXTSA1) RoHS: Compliant Min Qty: 15000 Package Multiple: 3000 Lead time: 20 Weeks, 0 Days Container: Reel 0
  • 15,000 $0.0320
  • 21,000 $0.0310
  • 36,000 $0.0300
  • 75,000 $0.0290
  • 150,000 $0.0280
$0.0280 / $0.0320 Buy Now
DISTI # SP005558639
EBV Elektronik Power MOSFET, N Channel, 100 V, 190 mA, 2.4 ohm, SOT-23, Surface Mount (Alt: SP005558639) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 3 Weeks, 0 Days EBV - 30000
Buy Now
DISTI # 3755132
element14 Asia-Pacific MOSFET, N-CH, 100V, 0.19A, SOT-23 RoHS: Compliant Min Qty: 5 Container: Cut Tape 1920
  • 5 $0.2539
  • 50 $0.1791
  • 100 $0.1042
  • 500 $0.0726
  • 1,500 $0.0719
$0.0719 / $0.2539 Buy Now
DISTI # 3755132RL
element14 Asia-Pacific MOSFET, N-CH, 100V, 0.19A, SOT-23 RoHS: Compliant Min Qty: 100 Container: Reel 1920
  • 100 $0.1042
  • 500 $0.0726
  • 1,500 $0.0719
$0.0719 / $0.1042 Buy Now
DISTI # 3755132RL
Farnell MOSFET, N-CH, 100V, 0.19A, SOT-23 RoHS: Compliant Min Qty: 100 Lead time: 23 Weeks, 1 Days Container: Reel 1920
  • 100 $0.1060
  • 500 $0.0689
  • 1,500 $0.0675
$0.0675 / $0.1060 Buy Now
DISTI # 3755132
Farnell MOSFET, N-CH, 100V, 0.19A, SOT-23 RoHS: Compliant Min Qty: 5 Lead time: 23 Weeks, 1 Days Container: Cut Tape 1920
  • 5 $0.2744
  • 50 $0.1905
  • 100 $0.1060
  • 500 $0.0689
  • 1,500 $0.0675
$0.0675 / $0.2744 Buy Now
DISTI # 4319348
Farnell MOSFET, N-CH, 100V, 0.19A, SOT-23 RoHS: Compliant Min Qty: 3000 Lead time: 41 Weeks, 1 Days Container: Reel 0
  • 3,000 $0.0551
  • 9,000 $0.0489
$0.0489 / $0.0551 Buy Now
New Advantage Corporation   RoHS: Compliant Min Qty: 1 Package Multiple: 3000 24000
  • 3,000 $0.0731
  • 24,000 $0.0681
$0.0681 / $0.0731 Buy Now

Part Details for BSS123IXTSA1

BSS123IXTSA1 CAD Models

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BSS123IXTSA1 Part Data Attributes

Parametric Data
BSS123IXTSA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
BSS123IXTSA1 Infineon Technologies AG Small Signal Field-Effect Transistor, 0.19A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description SOT-23, 3 PIN
Reach Compliance Code compliant
Factory Lead Time 20 Weeks
Samacsys Manufacturer Infineon
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 0.19 A
Drain-source On Resistance-Max 6 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 1.6 pF
JESD-30 Code R-PDSO-G3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 0.5 W
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON

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