Datasheets
BSS123LT1G by:

Power MOSFET 170 mA, 100 V, N-Channel SOT-23, SOT-23 (TO-236) 3 LEAD, 3000-REEL

Part Details for BSS123LT1G by onsemi

Overview of BSS123LT1G by onsemi

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Price & Stock for BSS123LT1G

Part # Distributor Description Stock Price Buy
DISTI # BSS123LT1GOSCT-ND
DigiKey MOSFET N-CH 100V 170MA SOT23-3 Min Qty: 1 Lead time: 12 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 173027
In Stock
  • 1 $0.3600
  • 10 $0.2440
  • 100 $0.1191
  • 500 $0.0993
  • 1,000 $0.0690
  • 3,000 $0.0598
  • 6,000 $0.0555
  • 9,000 $0.0460
  • 30,000 $0.0452
  • 75,000 $0.0406
  • 150,000 $0.0352
$0.0352 / $0.3600 Buy Now
DISTI # 863-BSS123LT1G
Mouser Electronics MOSFET 100V 170mA N-Channel RoHS: Compliant 366113
  • 1 $0.3500
  • 10 $0.2430
  • 100 $0.1540
  • 1,000 $0.0690
  • 2,500 $0.0590
  • 10,000 $0.0460
  • 30,000 $0.0430
  • 60,000 $0.0400
  • 90,000 $0.0390
$0.0390 / $0.3500 Buy Now
Future Electronics N-Channel 100 V 6 Ohm 225 mW Surface Mount Power MOSFET - SOT-23 RoHS: Compliant pbFree: Yes Min Qty: 30000 Package Multiple: 3000 Container: Reel 0
Reel
  • 3,000 $0.0380
  • 9,000 $0.0365
  • 15,000 $0.0359
  • 30,000 $0.0350
  • 60,000 $0.0337
$0.0337 / $0.0380 Buy Now
Future Electronics N-Channel 100 V 6 Ohm 225 mW Surface Mount Power MOSFET - SOT-23 RoHS: Compliant pbFree: Yes Min Qty: 30000 Package Multiple: 3000 Container: Reel 0
Reel
  • 3,000 $0.0380
  • 9,000 $0.0365
  • 15,000 $0.0359
  • 30,000 $0.0350
  • 60,000 $0.0337
$0.0337 / $0.0380 Buy Now
Future Electronics N-Channel 100 V 6 Ohm 225 mW Surface Mount Power MOSFET - SOT-23 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel 0
Reel
  • 3,000 $0.0380
  • 9,000 $0.0365
  • 15,000 $0.0359
  • 30,000 $0.0350
  • 60,000 $0.0337
$0.0337 / $0.0380 Buy Now
Quest Components MOSFET Transistor, N-Channel, TO-236AB 12623
  • 1 $0.1012
  • 792 $0.0455
  • 4,393 $0.0329
$0.0329 / $0.1012 Buy Now
Quest Components MOSFET Transistor, N-Channel, TO-236AB 24
  • 1 $0.2100
  • 25 $0.1050
$0.1050 / $0.2100 Buy Now
Quest Components MOSFET Transistor, N-Channel, TO-236AB 2689
  • 1 $0.2500
  • 81 $0.0750
  • 668 $0.0500
$0.0500 / $0.2500 Buy Now
Quest Components MOSFET Transistor, N-Channel, TO-236AB 800
  • 1 $0.2530
  • 50 $0.1139
  • 440 $0.0759
$0.0759 / $0.2530 Buy Now
Quest Components MOSFET Transistor, N-Channel, TO-236AB 136
  • 1 $0.3000
  • 18 $0.2400
  • 43 $0.1350
$0.1350 / $0.3000 Buy Now
Quest Components MOSFET Transistor, N-Channel, TO-236AB 840
  • 1 $0.4000
  • 32 $0.1800
  • 279 $0.1200
$0.1200 / $0.4000 Buy Now

Part Details for BSS123LT1G

BSS123LT1G CAD Models

BSS123LT1G Part Data Attributes

BSS123LT1G onsemi
Buy Now Datasheet
Compare Parts:
BSS123LT1G onsemi Power MOSFET 170 mA, 100 V, N-Channel SOT-23, SOT-23 (TO-236) 3 LEAD, 3000-REEL
Pbfree Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ONSEMI
Part Package Code SOT-23 (TO-236) 3 LEAD
Package Description ROHS COMPLIANT, CASE 318-08, 3 PIN
Pin Count 3
Manufacturer Package Code 318-08
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Factory Lead Time 53 Weeks
Samacsys Manufacturer onsemi
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 0.17 A
Drain-source On Resistance-Max 6 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-236
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 0.225 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for BSS123LT1G

This table gives cross-reference parts and alternative options found for BSS123LT1G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSS123LT1G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BSS123LT3 170mA, 100V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, CASE 318-08, 3 PIN onsemi BSS123LT1G vs BSS123LT3
BSS123-F169 N-Channel Logic Level Enhancement Mode Field Effect Transistor 100V, 170 mA, 6Ω, 3000-REEL onsemi BSS123LT1G vs BSS123-F169
Q62702-S512 Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN Infineon Technologies AG BSS123LT1G vs Q62702-S512
BSS123TC 170mA, 100V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET Diodes Incorporated BSS123LT1G vs BSS123TC
BSS123D87Z Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN Fairchild Semiconductor Corporation BSS123LT1G vs BSS123D87Z
BSS123/S62Z 170mA, 100V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB Texas Instruments BSS123LT1G vs BSS123/S62Z
BSS123E6433 Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN Siemens BSS123LT1G vs BSS123E6433
BSS123LT1 Power MOSFET 170 mA, 100 V, N-Channel SOT-23, SOT-23 (TO-236) 3 LEAD, 3000-REEL onsemi BSS123LT1G vs BSS123LT1
BSS123 Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE PACKAGE-3 WEITRON INTERNATIONAL CO., LTD. BSS123LT1G vs BSS123
BSS123-L99Z TRANSISTOR 170 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, FET General Purpose Small Signal National Semiconductor Corporation BSS123LT1G vs BSS123-L99Z
Part Number Description Manufacturer Compare
BSS123E6327 Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN Infineon Technologies AG BSS123LT1G vs BSS123E6327
BSS123G Small Signal Field-Effect Transistor, Galaxy Microelectronics BSS123LT1G vs BSS123G
BSS123D87Z Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN Fairchild Semiconductor Corporation BSS123LT1G vs BSS123D87Z
BSS123 Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE PACKAGE-3 WEITRON INTERNATIONAL CO., LTD. BSS123LT1G vs BSS123
BSS123 Small Signal Field-Effect Transistor, Galaxy Microelectronics BSS123LT1G vs BSS123
BSS123 Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, Diodes Incorporated BSS123LT1G vs BSS123
BSS123L6327HTSA1 Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 Infineon Technologies AG BSS123LT1G vs BSS123L6327HTSA1
BSS123-13 Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC PACKAGE-3 Diodes Incorporated BSS123LT1G vs BSS123-13
Q67000-S245 Small Signal Field-Effect Transistor, 0.17A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN Infineon Technologies AG BSS123LT1G vs Q67000-S245
SBSS123LT1 170mA, 100V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, CASE 318-08, 3 PIN onsemi BSS123LT1G vs SBSS123LT1

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