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BSS138BK - 60 V, 360 mA N-channel Trench MOSFET@en-us TO-236 3-Pin
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
61T7486
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Newark | Mosfet, N Channel, 60V, 0.36A, Sot23, Channel Type:N Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:360Ma, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1.1V Rohs Compliant: Yes |Nexperia BSS138BK,215 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 868322 |
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$0.0760 / $0.3740 | Buy Now |
DISTI #
86AK7296
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Newark | Mosfet, N Ch, 60V, 0.36A, Sot23, Reel, Transistor Polarity:N Channel, Continuous Drain Current Id:360Ma, Drain Source Voltage Vds:60V, On Resistance Rds(On):1Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:1.1V, Power Rohs Compliant: Yes |Nexperia BSS138BK,215 RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 1 Container: Reel | 435000 |
|
$0.0480 / $0.0600 | Buy Now |
DISTI #
BSS138BK,215
|
Avnet Americas | Power MOSFET, N Channel, 60 V, 360 mA, 1.6 Ohm, SOT-23 (TO-236AB), 3 Pins, Surface Mount - Tape and Reel (Alt: BSS138BK,215) RoHS: Compliant Min Qty: 14368 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Reel | 15000 Partner Stock |
|
$0.0461 / $0.0549 | Buy Now |
DISTI #
BSS138BK,215
|
Avnet Americas | Power MOSFET, N Channel, 60 V, 360 mA, 1.6 Ohm, SOT-23 (TO-236AB), 3 Pins, Surface Mount - Tape and Reel (Alt: BSS138BK,215) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Container: Reel | 15000 Factory Stock |
|
$0.0344 | Buy Now |
DISTI #
BSS138BK,215
|
Avnet Americas | Power MOSFET, N Channel, 60 V, 360 mA, 1.6 Ohm, SOT-23 (TO-236AB), 3 Pins, Surface Mount - Tape and Reel (Alt: BSS138BK,215) RoHS: Compliant Min Qty: 30000 Package Multiple: 3000 Container: Reel | 15000 Factory Stock |
|
$0.0344 | Buy Now |
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Bristol Electronics | 139510 |
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RFQ | ||
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Rochester Electronics | 60 V, 360 mA N-channel Trench MOSFET RoHS: Compliant Status: Active Min Qty: 1 | 15000 |
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$0.0216 / $0.0254 | Buy Now |
DISTI #
BSS138BK.215
|
TME | Transistor: N-MOSFET, unipolar, 60V, 0.36A, 350mW, SOT23,TO236AB Min Qty: 1 | 36695 |
|
$0.0296 / $0.2644 | Buy Now |
DISTI #
BSS138BK,215
|
Avnet Asia | Power MOSFET, N Channel, 60 V, 360 mA, 1.6 Ohm, SOT-23 (TO-236AB), 3 Pins, Surface Mount (Alt: BSS138BK,215) RoHS: Compliant Min Qty: 33000 Package Multiple: 3000 Lead time: 6 Weeks, 0 Days | 165000 |
|
$0.0328 / $0.0571 | Buy Now |
DISTI #
BSS138BK,215
|
Avnet Silica | Power MOSFET, N Channel, 60 V, 360 mA, 1.6 Ohm, SOT-23 (TO-236AB), 3 Pins, Surface Mount (Alt: BSS138BK,215) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 8 Weeks, 0 Days | Silica - 3000 |
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Buy Now |
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BSS138BK,215
Nexperia
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Datasheet
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BSS138BK,215
Nexperia
BSS138BK - 60 V, 360 mA N-channel Trench MOSFET@en-us TO-236 3-Pin
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | NEXPERIA | |
Part Package Code | TO-236 | |
Pin Count | 3 | |
Manufacturer Package Code | SOT23 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Nexperia | |
Additional Feature | LOGIC LEVEL COMPATIBLE | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 0.36 A | |
Drain-source On Resistance-Max | 1.6 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-236AB | |
JESD-30 Code | R-PDSO-G3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Reference Standard | AEC-Q101; IEC-60134 | |
Surface Mount | YES | |
Terminal Finish | TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |