Datasheets
BSS138I by: Infineon Technologies AG

Small Signal Field-Effect Transistor, 0.23A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN

Part Details for BSS138I by Infineon Technologies AG

Overview of BSS138I by Infineon Technologies AG

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Price & Stock for BSS138I

Part # Distributor Description Stock Price Buy
DISTI # TMOS6073
Rutronik N-CH 60V 0,23A 3500mOhm SOT-23 RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Container: Reel Stock DE - 150000
Stock HK - 0
Stock US - 0
Stock SG - 0
  • 3,000 $0.0403
  • 6,000 $0.0380
  • 12,000 $0.0357
  • 24,000 $0.0323
  • 45,000 $0.0311
$0.0311 / $0.0403 Buy Now

Part Details for BSS138I

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BSS138I Part Data Attributes

BSS138I Infineon Technologies AG
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BSS138I Infineon Technologies AG Small Signal Field-Effect Transistor, 0.23A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description SOT-23, 3 PIN
Reach Compliance Code compliant
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 0.23 A
Drain-source On Resistance-Max 3.5 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 2.8 pF
JESD-30 Code R-PDSO-G3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 0.36 W
Power Dissipation-Max (Abs) 0.36 W
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON

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