Datasheets
BSS308PEL6327 by: Infineon Technologies AG

Small Signal Field-Effect Transistor, 2.1A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3

Part Details for BSS308PEL6327 by Infineon Technologies AG

Overview of BSS308PEL6327 by Infineon Technologies AG

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Applications Education and Research Internet of Things (IoT) Computing and Data Storage Aerospace and Defense Healthcare Telecommunications Automotive

Price & Stock for BSS308PEL6327

Part # Distributor Description Stock Price Buy
Chip1Cloud MOSFET P-CH 30V 2A SOT-23 22500
RFQ
Win Source Electronics MOSFET P-CH 30V 2A SOT-23 1327600
  • 295 $0.1700
  • 715 $0.1400
  • 1,115 $0.1350
  • 1,530 $0.1310
  • 1,970 $0.1270
  • 2,655 $0.1130
$0.1130 / $0.1700 Buy Now

Part Details for BSS308PEL6327

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BSS308PEL6327 Part Data Attributes

BSS308PEL6327 Infineon Technologies AG
Buy Now Datasheet
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BSS308PEL6327 Infineon Technologies AG Small Signal Field-Effect Transistor, 2.1A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description SMALL OUTLINE, R-PDSO-G3
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature LOGIC LEVEL COMPATIBLE
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 2.1 A
Drain-source On Resistance-Max 0.08 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 7.8 pF
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 0.5 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Transistor Element Material SILICON

Alternate Parts for BSS308PEL6327

This table gives cross-reference parts and alternative options found for BSS308PEL6327. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSS308PEL6327, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BSS308PEL6327HTSA1 Small Signal Field-Effect Transistor, 2A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 Infineon Technologies AG BSS308PEL6327 vs BSS308PEL6327HTSA1
FDN360PD87Z Small Signal Field-Effect Transistor, 2A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3 Fairchild Semiconductor Corporation BSS308PEL6327 vs FDN360PD87Z
FDN360P_NL Small Signal Field-Effect Transistor, 2A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3 Fairchild Semiconductor Corporation BSS308PEL6327 vs FDN360P_NL
Part Number Description Manufacturer Compare
FDN360P_NL Small Signal Field-Effect Transistor, 2A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3 Fairchild Semiconductor Corporation BSS308PEL6327 vs FDN360P_NL
FDN360P 2000mA, 30V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SUPERSOT-3 Rochester Electronics LLC BSS308PEL6327 vs FDN360P
FDN360PD87Z Small Signal Field-Effect Transistor, 2A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3 Fairchild Semiconductor Corporation BSS308PEL6327 vs FDN360PD87Z
BSS308PEL6327HTSA1 Small Signal Field-Effect Transistor, 2A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 Infineon Technologies AG BSS308PEL6327 vs BSS308PEL6327HTSA1

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