BST51
Description: Power Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin,

Overview of BST51 by Galaxy Microelectronics

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  • Distributor Offerings: ( 0 listings )
  • Number of FFF Equivalents: ( 0 replacements )
  • CAD Models: ( Request Part )
  • Number of Functional Equivalents: ( 0 options )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )
Where used in Applications: Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

CAD Models for BST51 by Galaxy Microelectronics
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Part Data Attributes for BST51 by Galaxy Microelectronics

BST51
Galaxy Microelectronics
-
-
Part Life Cycle Code
Active
Ihs Manufacturer
CHANGZHOU GALAXY CENTURY MICROELECTRONICS CO LTD
Reach Compliance Code
unknown
ECCN Code
EAR99
Case Connection
COLLECTOR
Collector Current-Max (IC)
1 A
Collector-Emitter Voltage-Max
60 V
Configuration
DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
DC Current Gain-Min (hFE)
2000
JESD-30 Code
R-PSSO-F3
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Polarity/Channel Type
NPN
Surface Mount
YES
Terminal Form
FLAT
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Transition Frequency-Nom (fT)
200 MHz
Want to compare parts?
  1. BST51
    Galaxy Microelectronics
    Power Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin,
    VS

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