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Transistors / Power Field-Effect Transistors / BSZ15DC02KDHXTMA1
Datasheets
BSZ15DC02KDHXTMA1 by: Infineon Technologies AG

Power Field-Effect Transistor, 5.1A I(D), 20V, 0.055ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8

Part Details for BSZ15DC02KDHXTMA1 by Infineon Technologies AG

Results Overview of BSZ15DC02KDHXTMA1 by Infineon Technologies AG

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BSZ15DC02KDHXTMA1 Information

BSZ15DC02KDHXTMA1 by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for BSZ15DC02KDHXTMA1

Part # Distributor Description Stock Price Buy
DISTI # 13AC8355
Newark Mosfet, N & P-Ch, 20V, 5.1A, 2.5W, Channel Type:Complementary N And P Channel, Drain Source Voltage Vds N Channel:20V, Drain Source Voltage Vds P Channel:20V, Continuous Drain Current Id N Channel:5.1A, No. Of Pins:8Pins Rohs Compliant: Yes |Infineon BSZ15DC02KDHXTMA1 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 22504
  • 1 $0.5800
  • 10 $0.5800
  • 25 $0.5320
  • 50 $0.5320
  • 100 $0.5320
  • 250 $0.4910
  • 500 $0.4910
  • 1,000 $0.4910
$0.4910 / $0.5800 Buy Now
DISTI # 13AC8355
Avnet Americas Trans MOSFET N/P-CH 20V 5.1A/3.2A 8-Pin TSDSON T/R - Product that comes on tape, but is not reeled (Alt: 13AC8355) RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 4 Days Container: Ammo Pack 5831 Partner Stock
  • 1 $1.3000
  • 10 $1.0100
  • 25 $0.9480
  • 50 $0.8830
  • 100 $0.8180
$0.8180 / $1.3000 Buy Now
DISTI # BSZ15DC02KDHXTMA1
Avnet Americas Trans MOSFET N/P-CH 20V 5.1A/3.2A 8-Pin TSDSON T/R - Tape and Reel (Alt: BSZ15DC02KDHXTMA1) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 14 Weeks, 0 Days Container: Reel 0
  • 5,000 $0.4630
  • 10,000 $0.4592
  • 20,000 $0.4554
  • 30,000 $0.4516
  • 40,000 $0.4478
$0.4478 / $0.4630 Buy Now
Bristol Electronics   331
RFQ
Rochester Electronics BSZ15DC02KD H - 20V-60V Complementary MOSFET RoHS: Compliant Status: Active Min Qty: 1 6709
  • 1 $0.5271
  • 25 $0.5166
  • 100 $0.4955
  • 500 $0.4744
  • 1,000 $0.4480
$0.4480 / $0.5271 Buy Now
DISTI # BSZ15DC02KDHXTMA1
TME Transistor: N/P-MOSFET, unipolar, 20/-20V, 5.1/-3.2A, 2.5W Min Qty: 1 0
  • 1 $1.1560
  • 10 $0.9670
  • 100 $0.7250
  • 500 $0.5890
  • 1,000 $0.5780
$0.5780 / $1.1560 RFQ
DISTI # SMC-BSZ15DC02KDHXTMA1
Sensible Micro Corporation OEM Excess 5-7 Days Leadtime, We are an AS6081 Certified Vendor, 1 Yr Warranty RoHS: Not Compliant Min Qty: 25 Lead time: 2 Weeks, 0 Days 13
RFQ
Chip 1 Exchange INSTOCK 1050
RFQ
DISTI # C1S322001058003
Chip1Stop MOSFET RoHS: Compliant pbFree: Yes Container: Cut Tape 5000
  • 1 $0.5610
  • 10 $0.5590
  • 50 $0.5580
  • 100 $0.5560
  • 200 $0.5460
  • 500 $0.5450
  • 1,000 $0.5440
  • 2,000 $0.5410
  • 5,000 $0.5010
$0.5010 / $0.5610 Buy Now
DISTI # SP000961028
EBV Elektronik Trans MOSFET N/P-CH 20V 5.1A/3.2A 8-Pin TSDSON T/R (Alt: SP000961028) RoHS: Compliant Min Qty: 5000 Package Multiple: 5000 Lead time: 15 Weeks, 0 Days EBV - 0
Buy Now
LCSC 20V 2.5W 55m5.1A4.5V 1.4V110uA 1 N-Channel + 1 P-Channel TSDSON-8 MOSFETs ROHS 165
  • 1 $1.0596
  • 10 $0.8892
  • 30 $0.7947
  • 100 $0.6894
  • 500 $0.6414
  • 1,000 $0.6197
$0.6197 / $1.0596 Buy Now
Win Source Electronics MOSFET N/P-CH 20V 5.1/3.2A TDSON 115000
  • 70 $0.7564
  • 165 $0.6207
  • 250 $0.6013
  • 345 $0.5819
  • 445 $0.5625
  • 595 $0.5043
$0.5043 / $0.7564 Buy Now

Part Details for BSZ15DC02KDHXTMA1

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BSZ15DC02KDHXTMA1 Part Data Attributes

Parametric Data
BSZ15DC02KDHXTMA1 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
BSZ15DC02KDHXTMA1 Infineon Technologies AG Power Field-Effect Transistor, 5.1A I(D), 20V, 0.055ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description GREEN, PLASTIC, TSDSON-8
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 16 Weeks, 4 Days
Samacsys Manufacturer Infineon
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 11 mJ
Case Connection DRAIN
Configuration COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 5.1 A
Drain-source On Resistance-Max 0.055 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code S-PDSO-N8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape SQUARE
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Pulsed Drain Current-Max (IDM) 20 A
Reference Standard AEC-Q101
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form NO LEAD
Terminal Position DUAL
Transistor Element Material SILICON

Alternate Parts for BSZ15DC02KDHXTMA1

This table gives cross-reference parts and alternative options found for BSZ15DC02KDHXTMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSZ15DC02KDHXTMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
BSZ15DC02KDH Infineon Technologies AG Check for Price Power Field-Effect Transistor, 5.1A I(D), 20V, 0.055ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TSDSON-8 BSZ15DC02KDHXTMA1 vs BSZ15DC02KDH

BSZ15DC02KDHXTMA1 Frequently Asked Questions (FAQ)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or a heat sink to ensure good heat dissipation.

  • The device requires a stable input voltage and a proper biasing circuit to ensure optimal performance. A voltage regulator and a bias resistor network can be used to achieve this.

  • The critical timing parameters include the input rise and fall times, and the output propagation delay. These can be ensured by using a proper PCB layout, signal routing, and termination.

  • ESD protection can be achieved by using ESD protection diodes, TVS diodes, or ESD-protected buffers. Proper PCB layout and handling practices can also help prevent ESD damage.

  • The device has a maximum junction temperature of 150°C. Thermal management considerations include using a heat sink, thermal interface material, and ensuring good airflow around the device.

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