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BUJD203AD,118 by:

Power Bipolar Transistor

Part Details for BUJD203AD,118 by WeEn Semiconductor Co Ltd

Overview of BUJD203AD,118 by WeEn Semiconductor Co Ltd

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Price & Stock for BUJD203AD,118

Part # Distributor Description Stock Price Buy
DISTI # 1740-1424-1-ND
DigiKey TRANS NPN 425V 4A DPAK Min Qty: 1 Lead time: 8 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) Temporarily Out of Stock
  • 1 $0.8300
  • 7,500 $0.3000
  • 12,500 $0.2777
  • 25,000 $0.2750
$0.2750 / $0.8300 Buy Now
DISTI # 771-BUJD203AD118
Mouser Electronics Bipolar Transistors - BJT NPN 425 V 4 A RoHS: Compliant 0
  • 2,500 $0.2990
  • 7,500 $0.2990
  • 10,000 $0.2880
  • 25,000 $0.2770
$0.2770 / $0.2990 Order Now
DISTI # 58108192
Verical Trans GP BJT NPN 425V 4A 80000mW 3-Pin(2+Tab) DPAK T/R Min Qty: 377 Package Multiple: 1 Date Code: 2128 Americas - 2743
  • 1,000 $0.1941
$0.1941 Buy Now
DISTI # BUJD203AD.118
TME Transistor: NPN, bipolar, 425V, 4A, 80W, DPAK Min Qty: 1 0
  • 1 $0.7780
  • 3 $0.6310
  • 10 $0.4410
  • 30 $0.3980
  • 100 $0.3510
$0.3510 / $0.7780 RFQ
DISTI # BUJD203AD,118
Avnet Silica Transistor GP BJT NPN 425V 4A 3-Pin SOT-428 (Alt: BUJD203AD,118) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 9 Weeks, 0 Days Silica - 0
Buy Now
DISTI # BUJD203AD,118
EBV Elektronik Transistor GP BJT NPN 425V 4A 3-Pin SOT-428 (Alt: BUJD203AD,118) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 9 Weeks, 0 Days EBV - 5000
Buy Now
New Advantage Corporation   RoHS: Compliant Min Qty: 1 Package Multiple: 2500 5000
  • 2,500 $0.4371
  • 5,000 $0.4045
$0.4045 / $0.4371 Buy Now

Part Details for BUJD203AD,118

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BUJD203AD,118 Part Data Attributes

BUJD203AD,118 WeEn Semiconductor Co Ltd
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BUJD203AD,118 WeEn Semiconductor Co Ltd Power Bipolar Transistor
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer WEEN SEMICONDUCTORS CO LTD
Package Description SC-63, DPAK-3/2
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 36 Weeks
Case Connection COLLECTOR
Collector Current-Max (IC) 4 A
Collector-Emitter Voltage-Max 425 V
Configuration SINGLE WITH BUILT-IN DIODE
DC Current Gain-Min (hFE) 11
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type NPN
Reference Standard IEC-60134
Surface Mount YES
Terminal Finish TIN
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

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