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Transistors / Power Field-Effect Transistors / BUK9M10-30EX
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BUK9M10-30EX by:

BUK9M10-30E - N-channel 30 V, 10 mΩ logic level MOSFET in LFPAK33@en-us

Part Details for BUK9M10-30EX by Nexperia

Overview of BUK9M10-30EX by Nexperia

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Price & Stock for BUK9M10-30EX

Part # Distributor Description Stock Price Buy
DISTI # 28AK6750
Newark Mosfet, Aec-Q101, N-Ch, 30V, Sot-1210, Transistor Polarity:N Channel, Continuous Drain Current Id:54A, Drain Source Voltage Vds:30V, On Resistance Rds(On):0.0064Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:1.7V, Power Rohs Compliant: Yes |Nexperia BUK9M10-30EX Min Qty: 1500 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 1,500 $0.2950
  • 3,000 $0.2880
  • 6,000 $0.2820
  • 9,000 $0.2760
$0.2760 / $0.2950 Buy Now
DISTI # 17AC9450
Newark Mosfet, N-Ch, Auto, 54A, 30V, Sot1210, Transistor Polarity:N Channel, Continuous Drain Current Id:54A, Drain Source Voltage Vds:30V, On Resistance Rds(On):0.0064Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:1.7V, Power Rohs Compliant: Yes |Nexperia BUK9M10-30EX Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape 0
  • 1 $0.8320
  • 10 $0.7280
  • 25 $0.6510
  • 50 $0.5740
  • 100 $0.4970
  • 250 $0.4570
  • 500 $0.4150
  • 1,000 $0.3420
$0.3420 / $0.8320 Buy Now
DISTI # 1727-2567-1-ND
DigiKey MOSFET N-CH 30V 54A LFPAK33 Min Qty: 1 Lead time: 13 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) 458
In Stock
  • 1 $0.8600
  • 10 $0.7480
  • 100 $0.5177
  • 500 $0.4325
  • 1,500 $0.3224
  • 3,000 $0.2871
  • 7,500 $0.2720
  • 10,500 $0.2519
  • 37,500 $0.2494
$0.2494 / $0.8600 Buy Now
DISTI # BUK9M10-30EX
Avnet Americas MOSFET 2N-CH 30V MLFPAK - Tape and Reel (Alt: BUK9M10-30EX) RoHS: Compliant Min Qty: 3000 Package Multiple: 1500 Lead time: 16 Weeks, 0 Days Container: Reel 0
  • 3,000 $0.2953
  • 6,000 $0.2873
  • 9,000 $0.2793
  • 15,000 $0.2713
  • 30,000 $0.2633
  • 150,000 $0.2554
  • 300,000 $0.2474
$0.2474 / $0.2953 Buy Now
DISTI # 771-BUK9M10-30EX
Mouser Electronics MOSFET BUK9M10-30E/SOT1210/mLFPAK RoHS: Compliant 5670
  • 1 $0.8000
  • 10 $0.6580
  • 100 $0.4780
  • 500 $0.3990
  • 1,000 $0.3240
  • 1,500 $0.2690
  • 3,000 $0.2570
  • 9,000 $0.2510
  • 24,000 $0.2490
$0.2490 / $0.8000 Buy Now
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 4500 Package Multiple: 1500 Lead time: 13 Weeks Container: Reel 0
Reel
  • 1,500 $0.2650
  • 3,000 $0.2600
  • 4,500 $0.2600
  • 7,500 $0.2550
  • 15,000 $0.2450
$0.2450 / $0.2650 Buy Now
DISTI # BUK9M10-30EX
TTI MOSFET BUK9M10-30E/SOT1210/mLFPAK RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 1500 Container: Reel Americas - 0
  • 3,000 $0.2700
  • 4,500 $0.2650
  • 9,000 $0.2590
  • 15,000 $0.2540
  • 24,000 $0.2490
$0.2490 / $0.2700 Buy Now
DISTI # BUK9M10-30EX
TME Transistor: N-MOSFET, unipolar, 30V, 38A, Idm: 216A, 55W Min Qty: 1 0
  • 1 $0.7870
  • 5 $0.5910
  • 25 $0.5300
  • 100 $0.4690
  • 500 $0.3930
$0.3930 / $0.7870 RFQ
DISTI # BUK9M10-30EX
Avnet Silica MOSFET 2N-CH 30V MLFPAK (Alt: BUK9M10-30EX) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 15 Weeks, 0 Days Silica - 0
Buy Now
DISTI # BUK9M10-30EX
EBV Elektronik MOSFET 2N-CH 30V MLFPAK (Alt: BUK9M10-30EX) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 15 Weeks, 0 Days EBV - 0
Buy Now

Part Details for BUK9M10-30EX

BUK9M10-30EX Part Data Attributes:

Parametric Data
BUK9M10-30EX Nexperia
Buy Now Datasheet
Compare Parts:
BUK9M10-30EX Nexperia BUK9M10-30E - N-channel 30 V, 10 mΩ logic level MOSFET in LFPAK33@en-us
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer NEXPERIA
Pin Count 8
Manufacturer Package Code SOT1210
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 16 Weeks
Samacsys Manufacturer Nexperia
Avalanche Energy Rating (Eas) 28.3 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 54 A
Drain-source On Resistance-Max 0.01 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G4
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 216 A
Reference Standard AEC-Q101; IEC-60134
Surface Mount YES
Terminal Finish TIN
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for BUK9M10-30EX

This table gives cross-reference parts and alternative options found for BUK9M10-30EX. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BUK9M10-30EX, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
STB120NH03L 60A, 30V, 0.0105ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, ROHS COMPLIANT, D2PAK-3 STMicroelectronics BUK9M10-30EX vs STB120NH03L
STU65N3LLH5 65A, 30V, 0.0097ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251, ROHS COMPLIANT, IPAK-3 STMicroelectronics BUK9M10-30EX vs STU65N3LLH5
STI120NH03L 60A, 30V, 0.0105ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, ROHS COMPLIANT, TO-262, I2PAK-3 STMicroelectronics BUK9M10-30EX vs STI120NH03L
ISL9N310AS3STL99Z Power Field-Effect Transistor, 62A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB Fairchild Semiconductor Corporation BUK9M10-30EX vs ISL9N310AS3STL99Z
FDB7030BLSL86Z Power Field-Effect Transistor, 56A I(D), 30V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 Fairchild Semiconductor Corporation BUK9M10-30EX vs FDB7030BLSL86Z
FDB7030BLSS62Z Power Field-Effect Transistor, 56A I(D), 30V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB Fairchild Semiconductor Corporation BUK9M10-30EX vs FDB7030BLSS62Z
FDB6644SL86Z Power Field-Effect Transistor, 55A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 Fairchild Semiconductor Corporation BUK9M10-30EX vs FDB6644SL86Z
ISL9N310AS3STL86Z Power Field-Effect Transistor, 62A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB Fairchild Semiconductor Corporation BUK9M10-30EX vs ISL9N310AS3STL86Z
STD65N3LLH5 N-channel 30 V, 0.0061 Ohm, 65 A, DPAK STripFET(TM) V Power MOSFET STMicroelectronics BUK9M10-30EX vs STD65N3LLH5

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