| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| BUK9M10-30EX | Nexperia | $0.6950 | Power Field-Effect Transistor, 54A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | STU65N3LLH5 vs BUK9M10-30EX |
| FDB6644SL86Z | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 55A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | STU65N3LLH5 vs FDB6644SL86Z |
| ISL9N310AS3STL99Z | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 62A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | STU65N3LLH5 vs ISL9N310AS3STL99Z |
| STP120NH03L | STMicroelectronics | Check for Price | Power Field-Effect Transistor, 60A I(D), 30V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | STU65N3LLH5 vs STP120NH03L |
| FDB7030BLSL86Z | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 56A I(D), 30V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | STU65N3LLH5 vs FDB7030BLSL86Z |
| FDB6644SS62Z | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 55A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | STU65N3LLH5 vs FDB6644SS62Z |
| STI120NH03L | STMicroelectronics | Check for Price | Power Field-Effect Transistor, 60A I(D), 30V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | STU65N3LLH5 vs STI120NH03L |
| STD65N3LLH5 | STMicroelectronics | Check for Price | Power Field-Effect Transistor, 65A I(D), 30V, 0.0097ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | STU65N3LLH5 vs STD65N3LLH5 |
| STB120NH03L | STMicroelectronics | Check for Price | Power Field-Effect Transistor, 60A I(D), 30V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | STU65N3LLH5 vs STB120NH03L |
Part Details for STU65N3LLH5 by STMicroelectronics
Results Overview of STU65N3LLH5 by STMicroelectronics
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (9 options)
- CAD Models: (Available)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
STU65N3LLH5 Information
STU65N3LLH5 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for STU65N3LLH5
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
497-13446-ND
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DigiKey | MOSFET N CH 30V 65A IPAK Min Qty: 1 Container: Tube |
50 Tube |
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$0.8950 / $1.4100 | Buy Now |
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Vyrian | Power Field-Effect Transistor, 65A I(D), 30V, 0.0097ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | 12845 |
|
RFQ |
STU65N3LLH5 CAD Models
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STU65N3LLH5 Part Data Attributes
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STU65N3LLH5
STMicroelectronics
Buy Now
Datasheet
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STU65N3LLH5
STMicroelectronics
Power Field-Effect Transistor, 65A I(D), 30V, 0.0097ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Part Package Code | TO-251 | |
| Package Description | Rohs Compliant, Ipak-3 | |
| Pin Count | 3 | |
| ECCN Code | EAR99 | |
| Additional Feature | Ultra-Low Resistance | |
| Avalanche Energy Rating (Eas) | 100 Mj | |
| Case Connection | Drain | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 65 A | |
| Drain-source On Resistance-Max | 0.0097 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| Feedback Cap-Max (Crss) | 10 Pf | |
| JEDEC-95 Code | TO-251 | |
| JESD-30 Code | R-PSIP-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | In-Line | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 50 W | |
| Pulsed Drain Current-Max (IDM) | 260 A | |
| Surface Mount | No | |
| Terminal Form | Through-Hole | |
| Terminal Position | Single | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
Alternate Parts for STU65N3LLH5
This table gives cross-reference parts and alternative options found for STU65N3LLH5. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of STU65N3LLH5, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
STU65N3LLH5 Frequently Asked Questions (FAQ)
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The recommended operating temperature range for the STU65N3LLH5 is -40°C to 125°C, but it can tolerate storage temperatures from -55°C to 150°C.
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To ensure reliability, follow the recommended thermal design guidelines, use a suitable thermal interface material, and consider derating the device's power dissipation at high temperatures.
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The maximum allowed voltage on the input pins of the STU65N3LLH5 is 5.5V, but it's recommended to keep it within the specified operating voltage range of 3.3V ± 10% to ensure proper operation.
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Follow the recommended power-up and power-down sequences in the datasheet to prevent latch-up, ensure proper initialization, and minimize power consumption.
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Follow good PCB design practices, such as using a solid ground plane, minimizing trace lengths, and avoiding signal routing near the device's power pins to reduce noise and ensure signal integrity.