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BUK9Y7R2-60E,115 by:

BUK9Y7R2-60E - N-channel 60 V, 7.2 mΩ logic level MOSFET in LFPAK56@en-us SOIC 4-Pin

Part Details for BUK9Y7R2-60E,115 by Nexperia

Overview of BUK9Y7R2-60E,115 by Nexperia

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Applications Energy and Power Systems Renewable Energy

Price & Stock for BUK9Y7R2-60E,115

Part # Distributor Description Stock Price Buy
DISTI # 1727-1814-1-ND
DigiKey MOSFET N-CH 60V 100A LFPAK56 Min Qty: 1 Lead time: 13 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) 3570
In Stock
  • 1 $1.2700
  • 10 $1.0380
  • 100 $0.8075
  • 500 $0.6844
  • 1,500 $0.5575
  • 3,000 $0.5249
  • 7,500 $0.4999
  • 10,500 $0.4768
$0.4768 / $1.2700 Buy Now
DISTI # BUK9Y7R2-60E,115
Avnet Americas Trans MOSFET N-CH 60V 100A 5-Pin LFPAK56 T/R - Tape and Reel (Alt: BUK9Y7R2-60E,115) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 13 Weeks, 0 Days Container: Reel 0
  • 1,500 $0.5247
  • 3,000 $0.5105
  • 6,000 $0.4963
  • 9,000 $0.4821
  • 12,000 $0.4679
  • 15,000 $0.4538
  • 150,000 $0.4396
$0.4396 / $0.5247 Buy Now
DISTI # 771-BUK9Y7R2-60E115
Mouser Electronics MOSFET BUK9Y7R2-60E/SOT669/LFPAK RoHS: Compliant 1469
  • 1 $1.2600
  • 10 $1.0300
  • 100 $0.7920
  • 500 $0.6710
  • 1,000 $0.6570
  • 1,500 $0.5580
$0.5580 / $1.2600 Buy Now
Future Electronics Trans MOSFET N-CH 60V 100A Automotive 5-Pin(4+Tab) LFPAK T/R RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 1500 Container: Reel 0
Reel
  • 1,500 $0.5250
  • 3,000 $0.5150
  • 4,500 $0.5100
  • 6,000 $0.5050
  • 7,500 $0.4900
$0.4900 / $0.5250 Buy Now
Future Electronics Trans MOSFET N-CH 60V 100A Automotive 5-Pin(4+Tab) LFPAK T/R RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 1500 Container: Reel 0
Reel
  • 1,500 $0.5250
  • 3,000 $0.5150
  • 4,500 $0.5100
  • 6,000 $0.5050
  • 7,500 $0.4900
$0.4900 / $0.5250 Buy Now
DISTI # BUK9Y7R2-60E,115
Avnet Americas Trans MOSFET N-CH 60V 100A 5-Pin LFPAK56 T/R - Tape and Reel (Alt: BUK9Y7R2-60E,115) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 13 Weeks, 0 Days Container: Reel 0
  • 1,500 $0.5247
  • 3,000 $0.5105
  • 6,000 $0.4963
  • 9,000 $0.4821
  • 12,000 $0.4679
  • 15,000 $0.4538
  • 150,000 $0.4396
$0.4396 / $0.5247 Buy Now
DISTI # BUK9Y7R2-60E.115
TME Transistor: N-MOSFET, unipolar, 60V, 72A, Idm: 405A, 167W Min Qty: 1 0
  • 1 $1.0400
  • 5 $0.9300
  • 25 $0.8300
  • 100 $0.7400
  • 500 $0.7000
$0.7000 / $1.0400 RFQ
DISTI # BUK9Y7R2-60E,115
Avnet Americas Trans MOSFET N-CH 60V 100A 5-Pin LFPAK56 T/R - Tape and Reel (Alt: BUK9Y7R2-60E,115) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 13 Weeks, 0 Days Container: Reel 0
  • 1,500 $0.5247
  • 3,000 $0.5105
  • 6,000 $0.4963
  • 9,000 $0.4821
  • 12,000 $0.4679
  • 15,000 $0.4538
  • 150,000 $0.4396
$0.4396 / $0.5247 Buy Now
DISTI # BUK9Y7R2-60E,115
Avnet Asia Trans MOSFET N-CH 60V 100A 5-Pin LFPAK56 T/R (Alt: BUK9Y7R2-60E,115) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 13 Weeks, 0 Days 0
  • 1,500 $0.4664
  • 3,000 $0.4604
  • 4,500 $0.4545
  • 7,500 $0.4487
  • 15,000 $0.4376
  • 37,500 $0.4271
  • 75,000 $0.4171
$0.4171 / $0.4664 Buy Now
DISTI # BUK9Y7R2-60E,115
Avnet Silica Trans MOSFET N-CH 60V 100A 5-Pin LFPAK56 T/R (Alt: BUK9Y7R2-60E,115) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 2 Weeks, 1 Days Silica - 0
Buy Now
DISTI # BUK9Y7R2-60E,115
EBV Elektronik Trans MOSFET N-CH 60V 100A 5-Pin LFPAK56 T/R (Alt: BUK9Y7R2-60E,115) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 2 Weeks, 1 Days EBV - 0
Buy Now

Part Details for BUK9Y7R2-60E,115

BUK9Y7R2-60E,115 CAD Models

BUK9Y7R2-60E,115 Part Data Attributes

BUK9Y7R2-60E,115 Nexperia
Buy Now Datasheet
Compare Parts:
BUK9Y7R2-60E,115 Nexperia BUK9Y7R2-60E - N-channel 60 V, 7.2 mΩ logic level MOSFET in LFPAK56@en-us SOIC 4-Pin
Part Life Cycle Code Active
Ihs Manufacturer NEXPERIA
Part Package Code SOIC
Package Description SMALL OUTLINE, R-PSSO-G4
Pin Count 4
Manufacturer Package Code SOT669
Reach Compliance Code not_compliant
Samacsys Manufacturer Nexperia
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 88.2 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 100 A
Drain-source On Resistance-Max 0.0072 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 253 pF
JEDEC-95 Code MO-235
JESD-30 Code R-PSSO-G4
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 167 W
Pulsed Drain Current-Max (IDM) 405 A
Reference Standard AEC-Q101; IEC-60134
Surface Mount YES
Terminal Finish TIN
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

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