Part Details for BUZ325 by Infineon Technologies AG
Overview of BUZ325 by Infineon Technologies AG
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part Details for BUZ325
BUZ325 CAD Models
BUZ325 Part Data Attributes
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BUZ325
Infineon Technologies AG
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Datasheet
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BUZ325
Infineon Technologies AG
Power Field-Effect Transistor, 12.5A I(D), 400V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 670 mJ | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 400 V | |
Drain Current-Max (ID) | 12.5 A | |
Drain-source On Resistance-Max | 0.35 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-218 | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 125 W | |
Pulsed Drain Current-Max (IDM) | 50 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | TIN LEAD | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for BUZ325
This table gives cross-reference parts and alternative options found for BUZ325. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BUZ325, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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MTW16N40E | 16A, 400V, 0.24ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE, CASE 340K-01, 3 PIN | Rochester Electronics LLC | BUZ325 vs MTW16N40E |
IRFP350 | Power Field-Effect Transistor, 15A I(D), 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | Samsung Semiconductor | BUZ325 vs IRFP350 |
BUZ325 | Power Field-Effect Transistor, 12.5A I(D), 400V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218 | Siemens | BUZ325 vs BUZ325 |
IRFP350 | 16A, 400V, 0.3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 | Intersil Corporation | BUZ325 vs IRFP350 |
IRFP350PBF | Power Field-Effect Transistor, 16A I(D), 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, LEAD FREE, TO-247AC, 3 PIN | International Rectifier | BUZ325 vs IRFP350PBF |
STW18NB40 | 18.4A, 400V, 0.26ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN | STMicroelectronics | BUZ325 vs STW18NB40 |
IRFP341 | Power Field-Effect Transistor, 10A I(D), 350V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | Samsung Semiconductor | BUZ325 vs IRFP341 |
IRFP353 | Power Field-Effect Transistor, 14A I(D), 350V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | International Rectifier | BUZ325 vs IRFP353 |
IRFP350 | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | Vishay Siliconix | BUZ325 vs IRFP350 |
IRFP353 | Power Field-Effect Transistor, 14A I(D), 350V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | Harris Semiconductor | BUZ325 vs IRFP353 |