Datasheets
BUZ63 by:

7.5A, 400V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3

Part Details for BUZ63 by TT Electronics Power and Hybrid / Semelab Limited

Overview of BUZ63 by TT Electronics Power and Hybrid / Semelab Limited

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Applications Energy and Power Systems Medical Imaging Robotics and Drones

Part Details for BUZ63

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BUZ63 Part Data Attributes:

BUZ63 TT Electronics Power and Hybrid / Semelab Limited
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BUZ63 TT Electronics Power and Hybrid / Semelab Limited 7.5A, 400V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3
Part Life Cycle Code Obsolete
Ihs Manufacturer SEMELAB LTD
Package Description FLANGE MOUNT, O-MBFM-P2
Reach Compliance Code compliant
ECCN Code EAR99
Configuration SINGLE
DS Breakdown Voltage-Min 400 V
Drain Current-Max (ID) 7.5 A
Drain-source On Resistance-Max 1 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-3
JESD-30 Code O-MBFM-P2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Package Body Material METAL
Package Shape ROUND
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount NO
Terminal Form PIN/PEG
Terminal Position BOTTOM
Transistor Element Material SILICON

Alternate Parts for BUZ63

This table gives cross-reference parts and alternative options found for BUZ63. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BUZ63, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BUZ63 Power Field-Effect Transistor, 7.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3 TT Electronics Resistors BUZ63 vs BUZ63
Part Number Description Manufacturer Compare
BUP62R1 Power Field-Effect Transistor, 6.8A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3, TT Electronics Resistors BUZ63 vs BUP62R1
BUP61R1 5.56A, 350V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 TT Electronics Power and Hybrid / Semelab Limited BUZ63 vs BUP61R1
IRF322 Power Field-Effect Transistor, 2.8A I(D), 400V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA International Rectifier BUZ63 vs IRF322
2N6760TX Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Microsemi Corporation BUZ63 vs 2N6760TX
IRF332 TRANSISTOR,MOSFET,N-CHANNEL,400V V(BR)DSS,4.5A I(D),TO-204AA Intersil Corporation BUZ63 vs IRF332
IRF320 TRANSISTOR,MOSFET,N-CHANNEL,400V V(BR)DSS,3.3A I(D),TO-204AA Intersil Corporation BUZ63 vs IRF320
JANTX2N6760 Power Field-Effect Transistor, 5.5A I(D), 400V, 1.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN Infineon Technologies AG BUZ63 vs JANTX2N6760
BUP69R1 7.93A, 400V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3 TT Electronics Power and Hybrid / Semelab Limited BUZ63 vs BUP69R1
2N6760 Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, Unitrode Corp (RETIRED) BUZ63 vs 2N6760
IRF332 Power Field-Effect Transistor, 4.5A I(D), 400V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Harris Semiconductor BUZ63 vs IRF332

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