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Power Field-Effect Transistor, 37A I(D), 650V, 0.079ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247,
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
1697-C3M0060065K-ND
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DigiKey | SICFET N-CH 650V 37A TO247-4L Min Qty: 1 Lead time: 34 Weeks Container: Tube |
106 In Stock |
|
$11.4377 / $16.5700 | Buy Now |
DISTI #
941-C3M0060065K
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Mouser Electronics | MOSFET SiC, MOSFET, 60 mO, 650V, TO-247-4, Industrial RoHS: Compliant | 689 |
|
$11.6700 / $16.4100 | Buy Now |
DISTI #
V99:2348_24121165
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Arrow Electronics | Trans MOSFET N-CH SiC 650V 37A 4-Pin(4+Tab) TO-247 Tube Min Qty: 1 Package Multiple: 1 Lead time: 34 Weeks Date Code: 2215 | Americas - 469 |
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$10.3140 / $15.3380 | Buy Now |
DISTI #
36856035
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Verical | Trans MOSFET N-CH SiC 650V 37A 4-Pin(4+Tab) TO-247 Tube Min Qty: 6 Package Multiple: 1 | Americas - 1191 |
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$9.1000 | Buy Now |
DISTI #
62164159
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Verical | Trans MOSFET N-CH SiC 650V 37A 4-Pin(4+Tab) TO-247 Tube Min Qty: 1 Package Multiple: 1 Date Code: 2215 | Americas - 469 |
|
$10.3140 / $15.3380 | Buy Now |
DISTI #
C3M0060065K
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TME | Transistor: N-MOSFET, SiC, unipolar, 650V, 27A, Idm: 99A, 150W Min Qty: 1 | 0 |
|
$10.5000 / $14.7000 | RFQ |
DISTI #
C3M0060065K
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Richardson RFPD | SILICON CARBIDE MOSFETS RoHS: Compliant Min Qty: 1 | 1191 |
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$7.4200 / $7.7200 | Buy Now |
DISTI #
SMC-C3M0060065K
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Sensible Micro Corporation | AS6081 Certified Vendor, 1 Yr Warranty RoHS: Not Compliant Min Qty: 25 Lead time: 2 Weeks, 0 Days | 390 |
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RFQ | |
DISTI #
C1S155400637227
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Chip1Stop | Silicon Carbide Power 650V MOSFET C3M™ Planar MOSFET Technology N-Channel Enhancement Mode RoHS: Compliant pbFree: Yes Container: Tube | 469 |
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$5.7700 / $8.4100 | Buy Now |
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LCSC | TO-247-4 SiC MOSFETs ROHS | 3 |
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$9.0423 / $11.9600 | Buy Now |
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C3M0060065K
Wolfspeed
Buy Now
Datasheet
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Compare Parts:
C3M0060065K
Wolfspeed
Power Field-Effect Transistor, 37A I(D), 650V, 0.079ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247,
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | WOLFSPEED INC | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Wolfspeed | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 650 V | |
Drain Current-Max (ID) | 37 A | |
Drain-source On Resistance-Max | 0.079 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 9 pF | |
JEDEC-95 Code | TO-247 | |
JESD-30 Code | R-PSFM-T4 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -40 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 150 W | |
Pulsed Drain Current-Max (IDM) | 99 A | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON CARBIDE |
This table gives cross-reference parts and alternative options found for C3M0060065K. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of C3M0060065K, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
MSC060SMA070B4 | Power Field-Effect Transistor, 39A I(D), 700V, 0.075ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247 | Microchip Technology Inc | C3M0060065K vs MSC060SMA070B4 |