Datasheets
C3M0060065K by:

Power Field-Effect Transistor, 37A I(D), 650V, 0.079ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247,

Part Details for C3M0060065K by Wolfspeed

Overview of C3M0060065K by Wolfspeed

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Applications Space Technology Internet of Things (IoT) Industrial Automation Renewable Energy Electronic Manufacturing Communication and Networking

Price & Stock for C3M0060065K

Part # Distributor Description Stock Price Buy
DISTI # 1697-C3M0060065K-ND
DigiKey SICFET N-CH 650V 37A TO247-4L Min Qty: 1 Lead time: 34 Weeks Container: Tube 106
In Stock
  • 1 $16.5700
  • 30 $13.4097
  • 120 $12.6210
  • 510 $11.4377
$11.4377 / $16.5700 Buy Now
DISTI # 941-C3M0060065K
Mouser Electronics MOSFET SiC, MOSFET, 60 mO, 650V, TO-247-4, Industrial RoHS: Compliant 689
  • 1 $16.4100
  • 10 $15.0800
  • 30 $13.4000
  • 60 $13.0100
  • 120 $12.8800
  • 510 $11.6700
$11.6700 / $16.4100 Buy Now
DISTI # V99:2348_24121165
Arrow Electronics Trans MOSFET N-CH SiC 650V 37A 4-Pin(4+Tab) TO-247 Tube Min Qty: 1 Package Multiple: 1 Lead time: 34 Weeks Date Code: 2215 Americas - 469
  • 1 $15.3380
  • 10 $13.8170
  • 25 $12.5600
  • 50 $11.7580
  • 100 $10.7110
  • 1,000 $10.3140
$10.3140 / $15.3380 Buy Now
DISTI # 36856035
Verical Trans MOSFET N-CH SiC 650V 37A 4-Pin(4+Tab) TO-247 Tube Min Qty: 6 Package Multiple: 1 Americas - 1191
  • 6 $9.1000
$9.1000 Buy Now
DISTI # 62164159
Verical Trans MOSFET N-CH SiC 650V 37A 4-Pin(4+Tab) TO-247 Tube Min Qty: 1 Package Multiple: 1 Date Code: 2215 Americas - 469
  • 1 $15.3380
  • 10 $13.8170
  • 25 $12.5600
  • 50 $11.7580
  • 100 $10.7110
  • 1,000 $10.3140
$10.3140 / $15.3380 Buy Now
DISTI # C3M0060065K
TME Transistor: N-MOSFET, SiC, unipolar, 650V, 27A, Idm: 99A, 150W Min Qty: 1 0
  • 1 $14.7000
  • 3 $13.2000
  • 10 $11.7000
  • 30 $10.5000
$10.5000 / $14.7000 RFQ
DISTI # C3M0060065K
Richardson RFPD SILICON CARBIDE MOSFETS RoHS: Compliant Min Qty: 1 1191
  • 1 $7.7200
  • 100 $7.4200
$7.4200 / $7.7200 Buy Now
DISTI # SMC-C3M0060065K
Sensible Micro Corporation AS6081 Certified Vendor, 1 Yr Warranty RoHS: Not Compliant Min Qty: 25 Lead time: 2 Weeks, 0 Days 390
RFQ
DISTI # C1S155400637227
Chip1Stop Silicon Carbide Power 650V MOSFET C3M™ Planar MOSFET Technology N-Channel Enhancement Mode RoHS: Compliant pbFree: Yes Container: Tube 469
  • 1 $8.4100
  • 5 $7.6800
  • 10 $7.5100
  • 50 $6.4100
  • 100 $5.8900
  • 200 $5.7700
$5.7700 / $8.4100 Buy Now
LCSC TO-247-4 SiC MOSFETs ROHS 3
  • 1 $11.9600
  • 10 $10.5847
  • 30 $9.7449
  • 90 $9.0423
$9.0423 / $11.9600 Buy Now

Part Details for C3M0060065K

C3M0060065K CAD Models

C3M0060065K Part Data Attributes:

C3M0060065K Wolfspeed
Buy Now Datasheet
Compare Parts:
C3M0060065K Wolfspeed Power Field-Effect Transistor, 37A I(D), 650V, 0.079ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer WOLFSPEED INC
Reach Compliance Code unknown
ECCN Code EAR99
Samacsys Manufacturer Wolfspeed
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 650 V
Drain Current-Max (ID) 37 A
Drain-source On Resistance-Max 0.079 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 9 pF
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T4
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -40 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 150 W
Pulsed Drain Current-Max (IDM) 99 A
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON CARBIDE

Alternate Parts for C3M0060065K

This table gives cross-reference parts and alternative options found for C3M0060065K. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of C3M0060065K, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
MSC060SMA070B4 Power Field-Effect Transistor, 39A I(D), 700V, 0.075ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247 Microchip Technology Inc C3M0060065K vs MSC060SMA070B4
Part Number Description Manufacturer Compare
SCT3060ALHRC11 Power Field-Effect Transistor, ROHM Semiconductor C3M0060065K vs SCT3060ALHRC11
MSC060SMA070B4 Power Field-Effect Transistor, 39A I(D), 700V, 0.075ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247 Microchip Technology Inc C3M0060065K vs MSC060SMA070B4
MSC060SMA070B Power Field-Effect Transistor, 39A I(D), 700V, 0.075ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET Microchip Technology Inc C3M0060065K vs MSC060SMA070B

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