Datasheets
CLF1G0035-50,112 by:

RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Nitride, N-Channel, High Electron Mobility FET, ROHS COMPLIANT, CERAMIC PACKAGE-2

Part Details for CLF1G0035-50,112 by Ampleon

Overview of CLF1G0035-50,112 by Ampleon

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Applications Education and Research Industrial Automation Electronic Manufacturing

Price & Stock for CLF1G0035-50,112

Part # Distributor Description Stock Price Buy
DISTI # 1603-1026-ND
DigiKey RF MOSFET GAN HEMT 50V SOT467C Min Qty: 60 Lead time: 30 Weeks Container: Tray Limited Supply - Call
  • 60 $157.4252
$157.4252 Buy Now

Part Details for CLF1G0035-50,112

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CLF1G0035-50,112 Part Data Attributes

CLF1G0035-50,112 Ampleon
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CLF1G0035-50,112 Ampleon RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Nitride, N-Channel, High Electron Mobility FET, ROHS COMPLIANT, CERAMIC PACKAGE-2
Rohs Code Yes
Part Life Cycle Code Contact Manufacturer
Ihs Manufacturer AMPLEON NETHERLANDS B V
Package Description FLANGE MOUNT, R-CDFM-F2
Reach Compliance Code unknown
ECCN Code EAR99
Samacsys Manufacturer Ampleon USA Inc.
Case Connection SOURCE
Configuration SINGLE
DS Breakdown Voltage-Min 150 V
FET Technology HIGH ELECTRON MOBILITY
Highest Frequency Band S BAND
JESD-30 Code R-CDFM-F2
Number of Elements 1
Number of Terminals 2
Operating Mode DEPLETION MODE
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Reference Standard IEC-60134
Surface Mount YES
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application AMPLIFIER
Transistor Element Material GALLIUM NITRIDE

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