Part Details for CLF1G0035S-100,112 by Ampleon
Overview of CLF1G0035S-100,112 by Ampleon
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Applications
Education and Research
Industrial Automation
Electronic Manufacturing
Part Details for CLF1G0035S-100,112
CLF1G0035S-100,112 CAD Models
CLF1G0035S-100,112 Part Data Attributes:
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CLF1G0035S-100,112
Ampleon
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Datasheet
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CLF1G0035S-100,112
Ampleon
RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Nitride, N-Channel, High Electron Mobility FET, ROHS COMPLIANT, CERAMIC PACKAGE-2
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Rohs Code | Yes | |
Part Life Cycle Code | Contact Manufacturer | |
Ihs Manufacturer | AMPLEON NETHERLANDS B V | |
Package Description | ROHS COMPLIANT, CERAMIC PACKAGE-2 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Case Connection | SOURCE | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 150 V | |
FET Technology | HIGH ELECTRON MOBILITY | |
Highest Frequency Band | S BAND | |
JESD-30 Code | R-CDFP-F2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | DEPLETION MODE | |
Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
Package Shape | RECTANGULAR | |
Package Style | FLATPACK | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Reference Standard | IEC-60134 | |
Surface Mount | YES | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | GALLIUM NITRIDE |