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Part Details for CSD25202W15 by Texas Instruments
Overview of CSD25202W15 by Texas Instruments
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Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for CSD25202W15
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
296-39837-1-ND
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DigiKey | MOSFET P-CH 20V 4A 9DSBGA Min Qty: 1 Lead time: 6 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
2950 In Stock |
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$0.1860 / $0.6100 | Buy Now |
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DISTI #
595-CSD25202W15
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Mouser Electronics | MOSFET 20V P-channel NexFET Pwr MOSFET RoHS: Compliant | 3689 |
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$0.1860 / $0.5400 | Buy Now |
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Ameya Holding Limited | MOSFET P-CH 20V 4A 9DSBGA | 98040 |
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RFQ |
Part Details for CSD25202W15
CSD25202W15 CAD Models
CSD25202W15 Part Data Attributes
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CSD25202W15
Texas Instruments
Buy Now
Datasheet
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CSD25202W15
Texas Instruments
-20-V, P channel NexFET™ power MOSFET, single WLP 1.5 mm x 1.5 mm, 26 mOhm, gate ESD protection 9-DSBGA
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | TEXAS INSTRUMENTS INC | |
| Package Description | GRID ARRAY, S-PBGA-B9 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.21.00.40 | |
| Samacsys Manufacturer | Texas Instruments | |
| Configuration | SINGLE WITH BUILT-IN DIODE AND RESISTOR | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | -4 A | |
| Drain-source On Resistance-Max | 0.052 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 27 pF | |
| JESD-30 Code | S-PBGA-B9 | |
| JESD-609 Code | e1 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 9 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | SQUARE | |
| Package Style | GRID ARRAY | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation Ambient-Max | 0.5 W | |
| Power Dissipation-Max (Abs) | 0.5 W | |
| Surface Mount | YES | |
| Terminal Finish | TIN SILVER COPPER | |
| Terminal Form | BALL | |
| Terminal Position | BOTTOM | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |