Datasheets
CSD25481F4 by:

-20-V, P channel NexFET™ power MOSFET, single LGA 0.6 mm x 1 mm, 105 mOhm, gate ESD protection 3-PICOSTAR -55 to 150

Part Details for CSD25481F4 by Texas Instruments

Overview of CSD25481F4 by Texas Instruments

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Price & Stock for CSD25481F4

Part # Distributor Description Stock Price Buy
DISTI # 296-40006-1-ND
DigiKey MOSFET P-CH 20V 2.5A 3PICOSTAR Min Qty: 1 Lead time: 6 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) 70868
In Stock
  • 1 $0.4300
  • 10 $0.3080
  • 100 $0.1552
  • 500 $0.1376
  • 1,000 $0.1071
  • 3,000 $0.0958
  • 6,000 $0.0937
  • 9,000 $0.0830
  • 30,000 $0.0819
  • 75,000 $0.0696
$0.0696 / $0.4300 Buy Now
DISTI # 595-CSD25481F4
Mouser Electronics MOSFET P-CH Pwr MOSFET 20V 90mohm RoHS: Compliant 17103
  • 1 $0.4300
  • 10 $0.3080
  • 100 $0.1380
  • 1,000 $0.1080
  • 3,000 $0.0880
  • 9,000 $0.0820
  • 24,000 $0.0770
  • 45,000 $0.0690
  • 99,000 $0.0660
$0.0660 / $0.4300 Buy Now
DISTI # J56:1989_07312793
Arrow Electronics Trans MOSFET P-CH 20V 2.5A 3-Pin PicoStar T/R Min Qty: 3000 Package Multiple: 3000 Lead time: 6 Weeks Europe - 9000
  • 3,000 $0.0792
  • 9,000 $0.0735
  • 24,000 $0.0693
  • 45,000 $0.0605
  • 99,000 $0.0586
$0.0586 / $0.0792 Buy Now
Ameya Holding Limited MOSFET P-CH 20V 2.5A 3PICOSTAR 2560
RFQ
Chip1Cloud MOSFET P-CH 20V 2.5A 3PICOSTAR 8000
RFQ
Perfect Parts Corporation   15859
RFQ
Sense Electronic Company Limited 3-XFDFN 6000
RFQ
Win Source Electronics MOSFET P-CH 20V 2.5A 3PICOSTAR / P-Channel 20 V 2.5A (Ta) 500mW (Ta) Surface Mount 3-PICOSTAR 91000
  • 355 $0.1420
  • 865 $0.1160
  • 1,330 $0.1130
  • 1,835 $0.1090
  • 2,360 $0.1060
  • 3,160 $0.0950
$0.0950 / $0.1420 Buy Now

Part Details for CSD25481F4

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CSD25481F4 Part Data Attributes

CSD25481F4 Texas Instruments
Buy Now Datasheet
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CSD25481F4 Texas Instruments -20-V, P channel NexFET™ power MOSFET, single LGA 0.6 mm x 1 mm, 105 mOhm, gate ESD protection 3-PICOSTAR -55 to 150
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer TEXAS INSTRUMENTS INC
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.21.00.40
Additional Feature ULTRA LOW RESISTANCE
Configuration SINGLE WITH BUILT-IN DIODE AND RESISTOR
DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) -2.5 A
Drain-source On Resistance-Max 0.174 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 5.5 pF
JESD-30 Code R-XBGA-N3
JESD-609 Code e4
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material UNSPECIFIED
Package Shape RECTANGULAR
Package Style GRID ARRAY
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 0.5 W
Surface Mount YES
Terminal Finish NICKEL GOLD
Terminal Form NO LEAD
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

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