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60-V, N channel NexFET™ power MOSFET, dual SO-8, 15 mOhm 8-SOIC -55 to 150
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
28AH2113
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Newark | Mosfet, Dual N Channel, 60V, 15A, Soic, Transistor Polarity:Dual N Channel, Continuous Drain Current Id:15A, Drain Source Voltage Vds:60V, On Resistance Rds(On):0.0125Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:3V, Powerrohs Compliant: Yes |TEXAS INSTRUMENTS CSD88537ND Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 275 |
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$1.0900 / $1.4100 | Buy Now |
DISTI #
86AK4678
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Newark | Mosfet, Dual N Channel, 60V, 15A, Soic |TEXAS INSTRUMENTS CSD88537ND Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
$1.8200 | Buy Now |
DISTI #
296-37303-1-ND
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DigiKey | MOSFET 2N-CH 60V 15A 8SOIC Min Qty: 1 Lead time: 6 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
7795 In Stock |
|
$0.4720 / $1.2600 | Buy Now |
DISTI #
595-CSD88537ND
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Mouser Electronics | MOSFET 60-V Dual N-Channel Power MOSFET RoHS: Compliant | 27259 |
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$0.4940 / $1.2600 | Buy Now |
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Ameya Holding Limited | MOSFET 2N-CH 60V 15A 8SOIC | 66485 |
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RFQ | |
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NexGen Digital | 1 |
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RFQ | ||
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Chip1Cloud | CSD88537ND, Dual 60 V N-Channel NexFET Power MOSFETs | 19952 |
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RFQ | |
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CHIPMALL.COM LIMITED | SO-860V12.5m NexFET MOSFET | 244 |
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$0.3421 / $0.3461 | Buy Now |
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Chips Pulse Industry Limited | SOIC-8_150mil MOSFETs RoHS Purchase Online, Ship Immediately | 2624 |
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$0.3115 / $0.4088 | Buy Now |
DISTI #
3009688RL
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element14 Asia-Pacific | MOSFET, DUAL N CHANNEL, 60V, 15A, SOIC RoHS: Compliant Min Qty: 100 Container: Reel | 275 |
|
$0.5751 / $0.9304 | Buy Now |
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CSD88537ND
Texas Instruments
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Datasheet
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CSD88537ND
Texas Instruments
60-V, N channel NexFET™ power MOSFET, dual SO-8, 15 mOhm 8-SOIC -55 to 150
|
Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | TEXAS INSTRUMENTS INC | |
Package Description | SOIC-8 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Samacsys Manufacturer | Texas Instruments | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 51 mJ | |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 16 A | |
Drain-source On Resistance-Max | 0.019 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 5.2 pF | |
JEDEC-95 Code | MS-012AA | |
JESD-30 Code | R-PDSO-G8 | |
JESD-609 Code | e4 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 2 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 2.1 W | |
Pulsed Drain Current-Max (IDM) | 62 A | |
Surface Mount | YES | |
Terminal Finish | Nickel/Palladium/Gold (Ni/Pd/Au) | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |