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Part Details for CSD88539ND by Texas Instruments
Overview of CSD88539ND by Texas Instruments
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Price & Stock for CSD88539ND
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
29AH3856
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Newark | Mosfet, Dual N Channel, 60V, 15A, Soic, Transistor Polarity:Dual N Channel, Continuous Drain Current Id:15A, Drain Source Voltage Vds:60V, On Resistance Rds(On):0.023Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:3V, Power Rohs Compliant: Yes |TEXAS INSTRUMENTS CSD88539ND Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 1871 |
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$0.6560 / $0.9460 | Buy Now |
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DISTI #
296-37304-1-ND
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DigiKey | MOSFET 2N-CH 60V 15A 8SOIC Min Qty: 1 Lead time: 6 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
5495 In Stock |
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$0.3013 / $0.9100 | Buy Now |
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DISTI #
595-CSD88539ND
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Mouser Electronics | MOSFET 60-V Dual N-Channel Power MOSFET RoHS: Compliant | 4395 |
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$0.2900 / $0.8600 | Buy Now |
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Rochester Electronics | CSD88539ND 60V, N Channel NexFET MOSFET, dual SO-8, 28mOhm RoHS: Compliant Status: Active Min Qty: 1 | 224 |
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$0.2715 / $0.3194 | Buy Now |
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Ameya Holding Limited | MOSFET 2N-CH 60V 15A 8SOIC | 36761 |
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RFQ | |
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Chip1Cloud | Dual 60 V N-Channel NexFET Power MOSFETs | 12512 |
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RFQ | |
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Chips Pulse Industry Limited | SOIC-8 MOSFETs ROHS Purchase Online, Ship Immediately | 336 |
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$0.3236 / $0.3411 | Buy Now |
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DISTI #
3125083RL
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element14 Asia-Pacific | MOSFET, DUAL N CHANNEL, 60V, 15A, SOIC RoHS: Compliant Min Qty: 1 Container: Reel | 2021 |
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$0.9082 | Buy Now |
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DISTI #
3125083
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element14 Asia-Pacific | MOSFET, DUAL N CHANNEL, 60V, 15A, SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape | 2021 |
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$0.9082 | Buy Now |
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DISTI #
3125083
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Farnell | MOSFET, DUAL N CHANNEL, 60V, 15A, SOIC RoHS: Compliant Min Qty: 1 Lead time: 40 Weeks, 1 Days Container: Cut Tape | 2021 |
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$0.3258 / $1.0386 | Buy Now |
Part Details for CSD88539ND
CSD88539ND CAD Models
CSD88539ND Part Data Attributes
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CSD88539ND
Texas Instruments
Buy Now
Datasheet
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CSD88539ND
Texas Instruments
60-V, N channel NexFET™ power MOSFET, dual SO-8, 28 mOhm 8-SOIC -55 to 150
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | TEXAS INSTRUMENTS INC | |
| Package Description | SOIC, 8 PIN | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Samacsys Manufacturer | Texas Instruments | |
| Additional Feature | AVALANCHE RATED | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 11.7 A | |
| Drain-source On Resistance-Max | 0.034 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 2.6 pF | |
| JEDEC-95 Code | MS-012AA | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e4 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 2.1 W | |
| Pulsed Drain Current-Max (IDM) | 46 A | |
| Surface Mount | YES | |
| Terminal Finish | NICKEL PALLADIUM GOLD | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Resources and Additional Insights for CSD88539ND
Reference Designs related to CSD88539ND
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