Part Details for CY7C1243KV18-450BZC by Cypress Semiconductor
Overview of CY7C1243KV18-450BZC by Cypress Semiconductor
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- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
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Price & Stock for CY7C1243KV18-450BZC
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2156-CY7C1243KV18-450BZC-ND
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DigiKey | IC SRAM 36MBIT PAR 165FBGA Min Qty: 5 Container: Bulk MARKETPLACE PRODUCT |
212 In Stock |
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$67.0500 | Buy Now |
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Rochester Electronics | 7C1243KV18 - QDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165 RoHS: Not Compliant Status: Active Min Qty: 1 | 212 |
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$57.5400 / $67.7000 | Buy Now |
Part Details for CY7C1243KV18-450BZC
CY7C1243KV18-450BZC CAD Models
CY7C1243KV18-450BZC Part Data Attributes
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CY7C1243KV18-450BZC
Cypress Semiconductor
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Datasheet
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CY7C1243KV18-450BZC
Cypress Semiconductor
QDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, FBGA-165
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Rohs Code | No | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | CYPRESS SEMICONDUCTOR CORP | |
Part Package Code | BGA | |
Package Description | FBGA-165 | |
Pin Count | 165 | |
Reach Compliance Code | compliant | |
ECCN Code | 3A991.B.2.A | |
HTS Code | 8542.32.00.41 | |
Access Time-Max | 0.45 ns | |
Additional Feature | PIPELINED ARCHITECTURE | |
Clock Frequency-Max (fCLK) | 450 MHz | |
I/O Type | SEPARATE | |
JESD-30 Code | R-PBGA-B165 | |
JESD-609 Code | e0 | |
Length | 15 mm | |
Memory Density | 37748736 bit | |
Memory IC Type | QDR SRAM | |
Memory Width | 18 | |
Moisture Sensitivity Level | 3 | |
Number of Functions | 1 | |
Number of Terminals | 165 | |
Number of Words | 2097152 words | |
Number of Words Code | 2000000 | |
Operating Mode | SYNCHRONOUS | |
Operating Temperature-Max | 70 °C | |
Operating Temperature-Min | ||
Organization | 2MX18 | |
Output Characteristics | 3-STATE | |
Package Body Material | PLASTIC/EPOXY | |
Package Code | LBGA | |
Package Equivalence Code | BGA165,11X15,40 | |
Package Shape | RECTANGULAR | |
Package Style | GRID ARRAY, LOW PROFILE | |
Parallel/Serial | PARALLEL | |
Peak Reflow Temperature (Cel) | 220 | |
Qualification Status | Not Qualified | |
Seated Height-Max | 1.4 mm | |
Standby Current-Max | 0.33 A | |
Standby Voltage-Min | 1.7 V | |
Supply Current-Max | 0.72 mA | |
Supply Voltage-Max (Vsup) | 1.9 V | |
Supply Voltage-Min (Vsup) | 1.7 V | |
Supply Voltage-Nom (Vsup) | 1.8 V | |
Surface Mount | YES | |
Technology | CMOS | |
Temperature Grade | COMMERCIAL | |
Terminal Finish | TIN LEAD | |
Terminal Form | BALL | |
Terminal Pitch | 1 mm | |
Terminal Position | BOTTOM | |
Width | 13 mm |
Alternate Parts for CY7C1243KV18-450BZC
This table gives cross-reference parts and alternative options found for CY7C1243KV18-450BZC. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CY7C1243KV18-450BZC, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IS61NVP25618A-200TQI | 256KX18 ZBT SRAM, 3.1ns, PQFP100, TQFP-100 | Integrated Silicon Solution Inc | CY7C1243KV18-450BZC vs IS61NVP25618A-200TQI |
GS8161E36DGT-333V | Cache SRAM, 512KX36, 5ns, CMOS, PQFP100, TQFP-100 | GSI Technology | CY7C1243KV18-450BZC vs GS8161E36DGT-333V |
K7M163645A-FI130 | ZBT SRAM, 512KX36, CMOS, PBGA165, FBGA-165 | Samsung Semiconductor | CY7C1243KV18-450BZC vs K7M163645A-FI130 |
GS8161E36DD-333IV | Cache SRAM, 512KX36, 5ns, CMOS, PBGA165, FPBGA-165 | GSI Technology | CY7C1243KV18-450BZC vs GS8161E36DD-333IV |
CY7C2263KV18-550BZXI | QDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 | Infineon Technologies AG | CY7C1243KV18-450BZC vs CY7C2263KV18-550BZXI |
GS832136AGD-333IVT | Cache SRAM, 1MX36, 5ns, CMOS, PBGA165, ROHS COMPLIANT, FPBGA-165 | GSI Technology | CY7C1243KV18-450BZC vs GS832136AGD-333IVT |
CY7C1163KV18-400BZI | QDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, FBGA-165 | Infineon Technologies AG | CY7C1243KV18-450BZC vs CY7C1163KV18-400BZI |
GS8161E36DGD-150V | Cache SRAM, 512KX36, 7.5ns, CMOS, PBGA165, ROHS COMPLIANT, FPBGA-165 | GSI Technology | CY7C1243KV18-450BZC vs GS8161E36DGD-150V |
GS8162Z18DD-200IV | ZBT SRAM, 1MX18, 6.5ns, CMOS, PBGA165, FPBGA-165 | GSI Technology | CY7C1243KV18-450BZC vs GS8162Z18DD-200IV |
GS8161E36DGD-200VT | Cache SRAM, 512KX36, 6.5ns, CMOS, PBGA165, ROHS COMPLIANT, FPBGA-165 | GSI Technology | CY7C1243KV18-450BZC vs GS8161E36DGD-200VT |