Datasheets
CY7C1243KV18-450BZC by:

QDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, FBGA-165

Part Details for CY7C1243KV18-450BZC by Infineon Technologies AG

Overview of CY7C1243KV18-450BZC by Infineon Technologies AG

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Price & Stock for CY7C1243KV18-450BZC

Part # Distributor Description Stock Price Buy
DISTI # CY7C1243KV18-450BZC-ND
DigiKey IC SRAM 36MBIT PAR 165FBGA Min Qty: 680 Lead time: 11 Weeks Container: Tray Temporarily Out of Stock
  • 680 $61.8604
$61.8604 Buy Now
DISTI # CY7C1243KV18-450BZC
Avnet Americas SRAM Chip Sync Dual 1.8V 36M-Bit 2M x 18 0.45ns 165-Pin FBGA Tray - Trays (Alt: CY7C1243KV18-450BZC) RoHS: Not Compliant Min Qty: 680 Package Multiple: 136 Lead time: 11 Weeks, 0 Days Container: Tray 0
  • 680 $71.9510
$71.9510 Buy Now
DISTI # 727-7C1243KV18450BZC
Mouser Electronics SRAM 36MB (2Mx18) 1.8v 450MHz QDR II SRAM RoHS: Not Compliant 0
  • 680 $58.9200
$58.9200 Order Now
DISTI # CY7C1243KV18-450BZC
Avnet Americas SRAM Chip Sync Dual 1.8V 36M-Bit 2M x 18 0.45ns 165-Pin FBGA Tray - Trays (Alt: CY7C1243KV18-450BZC) RoHS: Not Compliant Min Qty: 680 Package Multiple: 136 Lead time: 11 Weeks, 0 Days Container: Tray 0
  • 680 $71.9510
$71.9510 Buy Now
DISTI # CY7C1243KV18-450BZC
Avnet Americas SRAM Chip Sync Dual 1.8V 36M-Bit 2M x 18 0.45ns 165-Pin FBGA Tray - Trays (Alt: CY7C1243KV18-450BZC) RoHS: Not Compliant Min Qty: 680 Package Multiple: 136 Lead time: 11 Weeks, 0 Days Container: Tray 0
  • 680 $71.9510
$71.9510 Buy Now

Part Details for CY7C1243KV18-450BZC

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CY7C1243KV18-450BZC Part Data Attributes

CY7C1243KV18-450BZC Infineon Technologies AG
Buy Now Datasheet
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CY7C1243KV18-450BZC Infineon Technologies AG QDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, FBGA-165
Rohs Code No
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description FBGA-165
Reach Compliance Code compliant
Factory Lead Time 11 Weeks
Access Time-Max 0.45 ns
Additional Feature PIPELINED ARCHITECTURE
Clock Frequency-Max (fCLK) 450 MHz
I/O Type SEPARATE
JESD-30 Code R-PBGA-B165
JESD-609 Code e0
Length 15 mm
Memory Density 37748736 bit
Memory IC Type QDR SRAM
Memory Width 18
Moisture Sensitivity Level 3
Number of Functions 1
Number of Terminals 165
Number of Words 2097152 words
Number of Words Code 2000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 2MX18
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code LBGA
Package Equivalence Code BGA165,11X15,40
Package Shape RECTANGULAR
Package Style GRID ARRAY, LOW PROFILE
Parallel/Serial PARALLEL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Qualification Status Not Qualified
Seated Height-Max 1.4 mm
Standby Current-Max 0.33 A
Standby Voltage-Min 1.7 V
Supply Current-Max 0.72 mA
Supply Voltage-Max (Vsup) 1.9 V
Supply Voltage-Min (Vsup) 1.7 V
Supply Voltage-Nom (Vsup) 1.8 V
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form BALL
Terminal Pitch 1 mm
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Width 13 mm

Alternate Parts for CY7C1243KV18-450BZC

This table gives cross-reference parts and alternative options found for CY7C1243KV18-450BZC. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CY7C1243KV18-450BZC, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IS61NVP25618A-200TQI 256KX18 ZBT SRAM, 3.1ns, PQFP100, TQFP-100 Integrated Silicon Solution Inc CY7C1243KV18-450BZC vs IS61NVP25618A-200TQI
GS8161E36DGT-333V Cache SRAM, 512KX36, 5ns, CMOS, PQFP100, TQFP-100 GSI Technology CY7C1243KV18-450BZC vs GS8161E36DGT-333V
K7M163645A-FI130 ZBT SRAM, 512KX36, CMOS, PBGA165, FBGA-165 Samsung Semiconductor CY7C1243KV18-450BZC vs K7M163645A-FI130
GS8161E36DD-333IV Cache SRAM, 512KX36, 5ns, CMOS, PBGA165, FPBGA-165 GSI Technology CY7C1243KV18-450BZC vs GS8161E36DD-333IV
CY7C2263KV18-550BZXI QDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 Infineon Technologies AG CY7C1243KV18-450BZC vs CY7C2263KV18-550BZXI
GS832136AGD-333IVT Cache SRAM, 1MX36, 5ns, CMOS, PBGA165, ROHS COMPLIANT, FPBGA-165 GSI Technology CY7C1243KV18-450BZC vs GS832136AGD-333IVT
CY7C1163KV18-400BZI QDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, FBGA-165 Infineon Technologies AG CY7C1243KV18-450BZC vs CY7C1163KV18-400BZI
GS8161E36DGD-150V Cache SRAM, 512KX36, 7.5ns, CMOS, PBGA165, ROHS COMPLIANT, FPBGA-165 GSI Technology CY7C1243KV18-450BZC vs GS8161E36DGD-150V
GS8162Z18DD-200IV ZBT SRAM, 1MX18, 6.5ns, CMOS, PBGA165, FPBGA-165 GSI Technology CY7C1243KV18-450BZC vs GS8162Z18DD-200IV
GS8161E36DGD-200VT Cache SRAM, 512KX36, 6.5ns, CMOS, PBGA165, ROHS COMPLIANT, FPBGA-165 GSI Technology CY7C1243KV18-450BZC vs GS8161E36DGD-200VT

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