Datasheets
CY7C1312BV18-250BZC by:

QDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, MO-216, FBGA-165

Part Details for CY7C1312BV18-250BZC by Cypress Semiconductor

Overview of CY7C1312BV18-250BZC by Cypress Semiconductor

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Price & Stock for CY7C1312BV18-250BZC

Part # Distributor Description Stock Price Buy
Bristol Electronics   Min Qty: 1 8
  • 1 $26.4000
$26.4000 Buy Now
Quest Components 1MX18 QDR SRAM, 0.45NS, PBGA165 49
  • 1 $45.2250
  • 13 $40.7025
  • 26 $38.4413
$38.4413 / $45.2250 Buy Now
Quest Components 1MX18 QDR SRAM, 0.45NS, PBGA165 6
  • 1 $28.6000
$28.6000 Buy Now
Rochester Electronics QDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165 ' RoHS: Not Compliant Status: Obsolete Min Qty: 1 136
  • 1 $35.4700
  • 25 $34.7600
  • 100 $33.3400
  • 500 $31.9200
  • 1,000 $30.1500
$30.1500 / $35.4700 Buy Now
DISTI # SMC-CY7C1312BV18-250BZC
Sensible Micro Corporation AS6081 Certified Vendor, Ships Same day, 1 Year Warranty RoHS: Compliant Min Qty: 25 Lead time: 0 Weeks, 1 Days Date Code: 06+ Container: Trays 96
  • 100 $23.2928
  • 500 $22.6955
  • 1,000 $21.5010
$21.5010 / $23.2928 RFQ

Part Details for CY7C1312BV18-250BZC

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CY7C1312BV18-250BZC Part Data Attributes

CY7C1312BV18-250BZC Cypress Semiconductor
Buy Now Datasheet
Compare Parts:
CY7C1312BV18-250BZC Cypress Semiconductor QDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, MO-216, FBGA-165
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer CYPRESS SEMICONDUCTOR CORP
Part Package Code BGA
Package Description 13 X 15 MM, 1.40 MM HEIGHT, MO-216, FBGA-165
Pin Count 165
Reach Compliance Code not_compliant
ECCN Code 3A991.B.2.A
HTS Code 8542.32.00.41
Access Time-Max 0.45 ns
Additional Feature PIPELINED ARCHITECTURE
Clock Frequency-Max (fCLK) 250 MHz
I/O Type SEPARATE
JESD-30 Code R-PBGA-B165
JESD-609 Code e0
Length 15 mm
Memory Density 18874368 bit
Memory IC Type QDR SRAM
Memory Width 18
Moisture Sensitivity Level 3
Number of Functions 1
Number of Terminals 165
Number of Words 1048576 words
Number of Words Code 1000000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 1MX18
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code LBGA
Package Equivalence Code BGA165,11X15,40
Package Shape RECTANGULAR
Package Style GRID ARRAY, LOW PROFILE
Parallel/Serial PARALLEL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Qualification Status Not Qualified
Seated Height-Max 1.4 mm
Standby Current-Max 0.28 A
Standby Voltage-Min 1.7 V
Supply Current-Max 0.6 mA
Supply Voltage-Max (Vsup) 1.9 V
Supply Voltage-Min (Vsup) 1.7 V
Supply Voltage-Nom (Vsup) 1.8 V
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form BALL
Terminal Pitch 1 mm
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Width 13 mm

Alternate Parts for CY7C1312BV18-250BZC

This table gives cross-reference parts and alternative options found for CY7C1312BV18-250BZC. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CY7C1312BV18-250BZC, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
K7R161882B-EI25 Standard SRAM, 1MX18, 0.45ns, CMOS, PBGA165 Samsung Semiconductor CY7C1312BV18-250BZC vs K7R161882B-EI25
CY7C1312BV18-250BZXI QDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-126, FBGA-165 Cypress Semiconductor CY7C1312BV18-250BZC vs CY7C1312BV18-250BZXI
K7R161882B-FC25 QDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FBGA-165 Samsung Semiconductor CY7C1312BV18-250BZC vs K7R161882B-FC25
CY7C1312BV18-250BZXC QDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-126, FBGA-165 Cypress Semiconductor CY7C1312BV18-250BZC vs CY7C1312BV18-250BZXC
K7R161882B-EC25 Standard SRAM, 1MX18, 0.45ns, CMOS, PBGA165 Samsung Semiconductor CY7C1312BV18-250BZC vs K7R161882B-EC25
K7R161882B-FI25 Standard SRAM, 1MX18, 0.45ns, CMOS, PBGA165 Samsung Semiconductor CY7C1312BV18-250BZC vs K7R161882B-FI25
Part Number Description Manufacturer Compare
CY7C1312BV18-250BZXI QDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-126, FBGA-165 Cypress Semiconductor CY7C1312BV18-250BZC vs CY7C1312BV18-250BZXI
IS61QDB41M18A-250B3LI QDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.20 MM HEIGHT, LEAD FREE, TFBGA-165 Integrated Silicon Solution Inc CY7C1312BV18-250BZC vs IS61QDB41M18A-250B3LI
K7R161882B-FC25 QDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FBGA-165 Samsung Semiconductor CY7C1312BV18-250BZC vs K7R161882B-FC25
IS61QDB41M18A-250B3 QDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.20 MM HEIGHT, TFBGA-165 Integrated Silicon Solution Inc CY7C1312BV18-250BZC vs IS61QDB41M18A-250B3
CY7C1312BV18-250BZXC QDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-126, FBGA-165 Cypress Semiconductor CY7C1312BV18-250BZC vs CY7C1312BV18-250BZXC
IS61QDB41M18A-250M3L QDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, LFBGA-165 Integrated Silicon Solution Inc CY7C1312BV18-250BZC vs IS61QDB41M18A-250M3L
IS61QDB41M18A-250B3L QDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.20 MM HEIGHT, LEAD FREE, TFBGA-165 Integrated Silicon Solution Inc CY7C1312BV18-250BZC vs IS61QDB41M18A-250B3L

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