Part Details for CY7C1315CV18-200BZC by Cypress Semiconductor
Overview of CY7C1315CV18-200BZC by Cypress Semiconductor
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- Part Data Attributes
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Applications
Consumer Electronics
Internet of Things (IoT)
Industrial Automation
Computing and Data Storage
Renewable Energy
Robotics and Drones
Price & Stock for CY7C1315CV18-200BZC
| Part # | Distributor | Description | Stock | Price | Buy | |
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Rochester Electronics | QDR SRAM, 512KX36, 0.45ns, CMOS, PBGA165 RoHS: Not Compliant Status: Obsolete Min Qty: 1 | 407 |
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$27.4200 / $32.2600 | Buy Now |
Part Details for CY7C1315CV18-200BZC
CY7C1315CV18-200BZC CAD Models
CY7C1315CV18-200BZC Part Data Attributes
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CY7C1315CV18-200BZC
Cypress Semiconductor
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Datasheet
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CY7C1315CV18-200BZC
Cypress Semiconductor
QDR SRAM, 512KX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, MO-216, FBGA-165
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | CYPRESS SEMICONDUCTOR CORP | |
| Part Package Code | BGA | |
| Package Description | 13 X 15 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 | |
| Pin Count | 165 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | 3A991.B.2.A | |
| HTS Code | 8542.32.00.41 | |
| Access Time-Max | 0.45 ns | |
| Additional Feature | PIPELINED ARCHITECTURE | |
| Clock Frequency-Max (fCLK) | 200 MHz | |
| I/O Type | SEPARATE | |
| JESD-30 Code | R-PBGA-B165 | |
| Length | 15 mm | |
| Memory Density | 18874368 bit | |
| Memory IC Type | QDR SRAM | |
| Memory Width | 36 | |
| Moisture Sensitivity Level | 3 | |
| Number of Functions | 1 | |
| Number of Terminals | 165 | |
| Number of Words | 524288 words | |
| Number of Words Code | 512000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 512KX36 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | LBGA | |
| Package Equivalence Code | BGA165,11X15,40 | |
| Package Shape | RECTANGULAR | |
| Package Style | GRID ARRAY, LOW PROFILE | |
| Parallel/Serial | PARALLEL | |
| Qualification Status | Not Qualified | |
| Seated Height-Max | 1.4 mm | |
| Standby Current-Max | 0.27 A | |
| Standby Voltage-Min | 1.7 V | |
| Supply Current-Max | 0.675 mA | |
| Supply Voltage-Max (Vsup) | 1.9 V | |
| Supply Voltage-Min (Vsup) | 1.7 V | |
| Supply Voltage-Nom (Vsup) | 1.8 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Form | BALL | |
| Terminal Pitch | 1 mm | |
| Terminal Position | BOTTOM | |
| Width | 13 mm |
Alternate Parts for CY7C1315CV18-200BZC
This table gives cross-reference parts and alternative options found for CY7C1315CV18-200BZC. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CY7C1315CV18-200BZC, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| CY7C1315AV18-200BZC | QDR SRAM, 512KX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, 1 MM PITCH, FBGA-165 | Cypress Semiconductor | CY7C1315CV18-200BZC vs CY7C1315AV18-200BZC |
| K7R163682B-FI250 | QDR SRAM, 512KX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FBGA-165 | Samsung Semiconductor | CY7C1315CV18-200BZC vs K7R163682B-FI250 |
| K7R163682B-EC200 | QDR SRAM, 512KX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FBGA-165 | Samsung Semiconductor | CY7C1315CV18-200BZC vs K7R163682B-EC200 |
| CY7C1315CV18-200BZXI | QDR SRAM, 512KX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 | Cypress Semiconductor | CY7C1315CV18-200BZC vs CY7C1315CV18-200BZXI |
| CY7C1315BV18-200BZI | QDR SRAM, 512KX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 | Cypress Semiconductor | CY7C1315CV18-200BZC vs CY7C1315BV18-200BZI |
| CY7C1315CV18-200BZI | QDR SRAM, 512KX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 | Cypress Semiconductor | CY7C1315CV18-200BZC vs CY7C1315CV18-200BZI |
| UPD44165364AF5-E50-EQ2-A | 512KX36 QDR SRAM, 0.45ns, PBGA165, 13 X 15 MM, LEAD FREE, PLASTIC, BGA-165 | Renesas Electronics Corporation | CY7C1315CV18-200BZC vs UPD44165364AF5-E50-EQ2-A |
| K7R163682B-FC20T | QDR SRAM, 512KX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FBGA-165 | Samsung Semiconductor | CY7C1315CV18-200BZC vs K7R163682B-FC20T |