Part Details for CY7C1318CV18-200BZXC by Cypress Semiconductor
Overview of CY7C1318CV18-200BZXC by Cypress Semiconductor
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Applications
Education and Research
Space Technology
Computing and Data Storage
Aerospace and Defense
Price & Stock for CY7C1318CV18-200BZXC
| Part # | Distributor | Description | Stock | Price | Buy | |
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Rochester Electronics | DDR SRAM, 1MX18, 0.45ns PBGA165 RoHS: Compliant Status: Obsolete Min Qty: 1 | 188 |
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$27.4200 / $32.2600 | Buy Now |
Part Details for CY7C1318CV18-200BZXC
CY7C1318CV18-200BZXC CAD Models
CY7C1318CV18-200BZXC Part Data Attributes
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CY7C1318CV18-200BZXC
Cypress Semiconductor
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Datasheet
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CY7C1318CV18-200BZXC
Cypress Semiconductor
DDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | CYPRESS SEMICONDUCTOR CORP | |
| Part Package Code | BGA | |
| Package Description | 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 | |
| Pin Count | 165 | |
| Reach Compliance Code | unknown | |
| ECCN Code | 3A991.B.2.A | |
| HTS Code | 8542.32.00.41 | |
| Access Time-Max | 0.45 ns | |
| Additional Feature | PIPELINED ARCHITECTURE | |
| Clock Frequency-Max (fCLK) | 200 MHz | |
| I/O Type | COMMON | |
| JESD-30 Code | R-PBGA-B165 | |
| JESD-609 Code | e1 | |
| Length | 15 mm | |
| Memory Density | 18874368 bit | |
| Memory IC Type | DDR SRAM | |
| Memory Width | 18 | |
| Moisture Sensitivity Level | 3 | |
| Number of Functions | 1 | |
| Number of Terminals | 165 | |
| Number of Words | 1048576 words | |
| Number of Words Code | 1000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 1MX18 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | LBGA | |
| Package Equivalence Code | BGA165,11X15,40 | |
| Package Shape | RECTANGULAR | |
| Package Style | GRID ARRAY, LOW PROFILE | |
| Parallel/Serial | PARALLEL | |
| Peak Reflow Temperature (Cel) | 260 | |
| Qualification Status | Not Qualified | |
| Seated Height-Max | 1.4 mm | |
| Standby Current-Max | 0.29 A | |
| Standby Voltage-Min | 1.7 V | |
| Supply Current-Max | 0.6 mA | |
| Supply Voltage-Max (Vsup) | 1.9 V | |
| Supply Voltage-Min (Vsup) | 1.7 V | |
| Supply Voltage-Nom (Vsup) | 1.8 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) | |
| Terminal Form | BALL | |
| Terminal Pitch | 1 mm | |
| Terminal Position | BOTTOM | |
| Time@Peak Reflow Temperature-Max (s) | 20 | |
| Width | 13 mm |
Alternate Parts for CY7C1318CV18-200BZXC
This table gives cross-reference parts and alternative options found for CY7C1318CV18-200BZXC. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CY7C1318CV18-200BZXC, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| CY7C1318BV18-200BZXC | DDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 | Cypress Semiconductor | CY7C1318CV18-200BZXC vs CY7C1318BV18-200BZXC |
| GS8182T18BGD-200IT | DDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 | GSI Technology | CY7C1318CV18-200BZXC vs GS8182T18BGD-200IT |
| CY7C1318BV18-200BZC | DDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 | Cypress Semiconductor | CY7C1318CV18-200BZXC vs CY7C1318BV18-200BZC |
| GS8182T18BD-250 | DDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165 | GSI Technology | CY7C1318CV18-200BZXC vs GS8182T18BD-250 |
| UPD44164182AF5-E40-EQ2-A | DDR SRAM, 1MX18, CMOS, PBGA165, 13 X 5 MM, LEAD FREE, PLASTIC, BGA-165 | NEC Electronics Group | CY7C1318CV18-200BZXC vs UPD44164182AF5-E40-EQ2-A |
| GS8182T18GBD-200 | DDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, ROHS COMPLIANT, FPBGA-165 | GSI Technology | CY7C1318CV18-200BZXC vs GS8182T18GBD-200 |
| GS8182T18BGD-250IT | DDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 | GSI Technology | CY7C1318CV18-200BZXC vs GS8182T18BGD-250IT |
| GS8182T18BGD-200T | DDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 | GSI Technology | CY7C1318CV18-200BZXC vs GS8182T18BGD-200T |
| GS8182T18GBD-250T | DDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, ROHS COMPLIANT, FPBGA-165 | GSI Technology | CY7C1318CV18-200BZXC vs GS8182T18GBD-250T |
| UPD44164182AF5-E50-EQ2 | DDR SRAM, 1MX18, CMOS, PBGA165, 13 X 5 MM, PLASTIC, BGA-165 | NEC Electronics Group | CY7C1318CV18-200BZXC vs UPD44164182AF5-E50-EQ2 |