Part Details for CY7C1320BV18-250BZC by Cypress Semiconductor
Overview of CY7C1320BV18-250BZC by Cypress Semiconductor
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- Part Data Attributes
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Price & Stock for CY7C1320BV18-250BZC
| Part # | Distributor | Description | Stock | Price | Buy | |
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Rochester Electronics | DDR SRAM, 512KX36, 0.45ns, CMOS, PBGA165 RoHS: Not Compliant Status: Obsolete Min Qty: 1 | 226 |
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$28.7600 / $33.8300 | Buy Now |
Part Details for CY7C1320BV18-250BZC
CY7C1320BV18-250BZC CAD Models
CY7C1320BV18-250BZC Part Data Attributes
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CY7C1320BV18-250BZC
Cypress Semiconductor
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Datasheet
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CY7C1320BV18-250BZC
Cypress Semiconductor
DDR SRAM, 512KX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, MO-216, FBGA-165
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | CYPRESS SEMICONDUCTOR CORP | |
| Part Package Code | BGA | |
| Package Description | 13 X 15 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 | |
| Pin Count | 165 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | 3A991.B.2.A | |
| HTS Code | 8542.32.00.41 | |
| Access Time-Max | 0.45 ns | |
| Additional Feature | PIPELINED ARCHITECTURE | |
| Clock Frequency-Max (fCLK) | 250 MHz | |
| I/O Type | COMMON | |
| JESD-30 Code | R-PBGA-B165 | |
| JESD-609 Code | e0 | |
| Length | 15 mm | |
| Memory Density | 18874368 bit | |
| Memory IC Type | DDR SRAM | |
| Memory Width | 36 | |
| Moisture Sensitivity Level | 3 | |
| Number of Functions | 1 | |
| Number of Terminals | 165 | |
| Number of Words | 524288 words | |
| Number of Words Code | 512000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 512KX36 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | LBGA | |
| Package Equivalence Code | BGA165,11X15,40 | |
| Package Shape | RECTANGULAR | |
| Package Style | GRID ARRAY, LOW PROFILE | |
| Parallel/Serial | PARALLEL | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Qualification Status | Not Qualified | |
| Seated Height-Max | 1.4 mm | |
| Standby Current-Max | 0.24 A | |
| Standby Voltage-Min | 1.7 V | |
| Supply Current-Max | 0.55 mA | |
| Supply Voltage-Max (Vsup) | 1.9 V | |
| Supply Voltage-Min (Vsup) | 1.7 V | |
| Supply Voltage-Nom (Vsup) | 1.8 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | BALL | |
| Terminal Pitch | 1 mm | |
| Terminal Position | BOTTOM | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Width | 13 mm |
Alternate Parts for CY7C1320BV18-250BZC
This table gives cross-reference parts and alternative options found for CY7C1320BV18-250BZC. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CY7C1320BV18-250BZC, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| GS8182T36BD-200IT | DDR SRAM, 512KX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165 | GSI Technology | CY7C1320BV18-250BZC vs GS8182T36BD-200IT |
| CY7C1320BV18-250BZI | DDR SRAM, 512KX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 | Cypress Semiconductor | CY7C1320BV18-250BZC vs CY7C1320BV18-250BZI |
| GS8182T36BGD-200IT | DDR SRAM, 512KX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 | GSI Technology | CY7C1320BV18-250BZC vs GS8182T36BGD-200IT |
| GS8182T36BGD-200T | DDR SRAM, 512KX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 | GSI Technology | CY7C1320BV18-250BZC vs GS8182T36BGD-200T |
| CY7C1320AV18-250BZC | DDR SRAM, 512KX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, FBGA-165 | Cypress Semiconductor | CY7C1320BV18-250BZC vs CY7C1320AV18-250BZC |
| CY7C1320BV18-250BZXI | DDR SRAM, 512KX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 | Cypress Semiconductor | CY7C1320BV18-250BZC vs CY7C1320BV18-250BZXI |
| GS8182T36BGD-200I | DDR SRAM, 512KX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165 | GSI Technology | CY7C1320BV18-250BZC vs GS8182T36BGD-200I |
| GS8182T36BD-250 | DDR SRAM, 512KX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165 | GSI Technology | CY7C1320BV18-250BZC vs GS8182T36BD-250 |
| 71P71604S200BQ8 | CABGA-165, Reel | Integrated Device Technology Inc | CY7C1320BV18-250BZC vs 71P71604S200BQ8 |
| GS8182T36GBD-200T | DDR SRAM, 512KX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, ROHS COMPLIANT, FPBGA-165 | GSI Technology | CY7C1320BV18-250BZC vs GS8182T36GBD-200T |