Datasheets
CY7C1320CV18-267BZXC by:

DDR SRAM, 512KX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165

Part Details for CY7C1320CV18-267BZXC by Cypress Semiconductor

Overview of CY7C1320CV18-267BZXC by Cypress Semiconductor

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Applications Consumer Electronics Internet of Things (IoT) Computing and Data Storage

Price & Stock for CY7C1320CV18-267BZXC

Part # Distributor Description Stock Price Buy
Rochester Electronics DDR SRAM, 512KX36, 0.45ns PBGA165 RoHS: Compliant Status: Obsolete Min Qty: 1 227
  • 1 $37.7200
  • 25 $36.9700
  • 100 $35.4600
  • 500 $33.9500
  • 1,000 $32.0600
$32.0600 / $37.7200 Buy Now

Part Details for CY7C1320CV18-267BZXC

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CY7C1320CV18-267BZXC Part Data Attributes

CY7C1320CV18-267BZXC Cypress Semiconductor
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CY7C1320CV18-267BZXC Cypress Semiconductor DDR SRAM, 512KX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer CYPRESS SEMICONDUCTOR CORP
Part Package Code BGA
Package Description 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165
Pin Count 165
Reach Compliance Code unknown
ECCN Code 3A991.B.2.A
HTS Code 8542.32.00.41
Access Time-Max 0.45 ns
Additional Feature PIPELINED ARCHITECTURE
Clock Frequency-Max (fCLK) 267 MHz
I/O Type COMMON
JESD-30 Code R-PBGA-B165
JESD-609 Code e1
Length 15 mm
Memory Density 18874368 bit
Memory IC Type DDR SRAM
Memory Width 36
Moisture Sensitivity Level 3
Number of Functions 1
Number of Terminals 165
Number of Words 524288 words
Number of Words Code 512000
Operating Mode SYNCHRONOUS
Operating Temperature-Max 70 °C
Operating Temperature-Min
Organization 512KX36
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code LBGA
Package Equivalence Code BGA165,11X15,40
Package Shape RECTANGULAR
Package Style GRID ARRAY, LOW PROFILE
Parallel/Serial PARALLEL
Peak Reflow Temperature (Cel) 260
Qualification Status Not Qualified
Seated Height-Max 1.4 mm
Standby Current-Max 0.33 A
Standby Voltage-Min 1.7 V
Supply Current-Max 0.855 mA
Supply Voltage-Max (Vsup) 1.9 V
Supply Voltage-Min (Vsup) 1.7 V
Supply Voltage-Nom (Vsup) 1.8 V
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Finish TIN SILVER COPPER
Terminal Form BALL
Terminal Pitch 1 mm
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) 20
Width 13 mm

Alternate Parts for CY7C1320CV18-267BZXC

This table gives cross-reference parts and alternative options found for CY7C1320CV18-267BZXC. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CY7C1320CV18-267BZXC, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
CY7C1320CV18-267BZC DDR SRAM, 512KX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 Cypress Semiconductor CY7C1320CV18-267BZXC vs CY7C1320CV18-267BZC
CY7C1320CV18-267BZXI DDR SRAM, 512KX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 Cypress Semiconductor CY7C1320CV18-267BZXC vs CY7C1320CV18-267BZXI
CY7C1320CV18-267BZI DDR SRAM, 512KX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 Cypress Semiconductor CY7C1320CV18-267BZXC vs CY7C1320CV18-267BZI
Part Number Description Manufacturer Compare
CY7C1320CV18-267BZXI DDR SRAM, 512KX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 Cypress Semiconductor CY7C1320CV18-267BZXC vs CY7C1320CV18-267BZXI
CY7C1320CV18-267BZC DDR SRAM, 512KX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 Cypress Semiconductor CY7C1320CV18-267BZXC vs CY7C1320CV18-267BZC
CY7C1320CV18-267BZI DDR SRAM, 512KX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 Cypress Semiconductor CY7C1320CV18-267BZXC vs CY7C1320CV18-267BZI

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