Part Details for CY7C1320JV18-250BZXI by Cypress Semiconductor
Overview of CY7C1320JV18-250BZXI by Cypress Semiconductor
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- Number of FFF Equivalents:
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- Number of Functional Equivalents:
- Part Data Attributes
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Price & Stock for CY7C1320JV18-250BZXI
Part # | Distributor | Description | Stock | Price | Buy | |
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Rochester Electronics | DDR SRAM, 512KX36, 0.45ns PBGA165 RoHS: Compliant Status: Obsolete Min Qty: 1 | 20 |
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$30.7000 / $36.1200 | Buy Now |
Part Details for CY7C1320JV18-250BZXI
CY7C1320JV18-250BZXI CAD Models
CY7C1320JV18-250BZXI Part Data Attributes
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CY7C1320JV18-250BZXI
Cypress Semiconductor
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Datasheet
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CY7C1320JV18-250BZXI
Cypress Semiconductor
DDR SRAM, 512KX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | CYPRESS SEMICONDUCTOR CORP | |
Part Package Code | BGA | |
Package Description | 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 | |
Pin Count | 165 | |
Reach Compliance Code | unknown | |
ECCN Code | 3A991.B.2.A | |
HTS Code | 8542.32.00.41 | |
Access Time-Max | 0.45 ns | |
Additional Feature | PIPELINED ARCHITECTURE | |
Clock Frequency-Max (fCLK) | 250 MHz | |
I/O Type | COMMON | |
JESD-30 Code | R-PBGA-B165 | |
JESD-609 Code | e1 | |
Length | 15 mm | |
Memory Density | 18874368 bit | |
Memory IC Type | DDR SRAM | |
Memory Width | 36 | |
Moisture Sensitivity Level | 3 | |
Number of Functions | 1 | |
Number of Terminals | 165 | |
Number of Words | 524288 words | |
Number of Words Code | 512000 | |
Operating Mode | SYNCHRONOUS | |
Operating Temperature-Max | 85 °C | |
Operating Temperature-Min | -40 °C | |
Organization | 512KX36 | |
Output Characteristics | 3-STATE | |
Package Body Material | PLASTIC/EPOXY | |
Package Code | LBGA | |
Package Equivalence Code | BGA165,11X15,40 | |
Package Shape | RECTANGULAR | |
Package Style | GRID ARRAY, LOW PROFILE | |
Parallel/Serial | PARALLEL | |
Peak Reflow Temperature (Cel) | 260 | |
Qualification Status | Not Qualified | |
Seated Height-Max | 1.4 mm | |
Standby Current-Max | 0.295 A | |
Standby Voltage-Min | 1.7 V | |
Supply Current-Max | 0.635 mA | |
Supply Voltage-Max (Vsup) | 1.9 V | |
Supply Voltage-Min (Vsup) | 1.7 V | |
Supply Voltage-Nom (Vsup) | 1.8 V | |
Surface Mount | YES | |
Technology | CMOS | |
Temperature Grade | INDUSTRIAL | |
Terminal Finish | TIN SILVER COPPER | |
Terminal Form | BALL | |
Terminal Pitch | 1 mm | |
Terminal Position | BOTTOM | |
Time@Peak Reflow Temperature-Max (s) | 20 | |
Width | 13 mm |
Alternate Parts for CY7C1320JV18-250BZXI
This table gives cross-reference parts and alternative options found for CY7C1320JV18-250BZXI. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CY7C1320JV18-250BZXI, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IS61DDP2B21M18A-550M3 | DDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1.40 MM HEIGHT, LFBGA-165 | Integrated Silicon Solution Inc | CY7C1320JV18-250BZXI vs IS61DDP2B21M18A-550M3 |
K7Q163682A-FC13 | QDR SRAM, 512KX36, 3ns, CMOS, PBGA165, 13 X 15 MM, FBGA-165 | Samsung Semiconductor | CY7C1320JV18-250BZXI vs K7Q163682A-FC13 |
CY7C1345B-50AC | Cache SRAM, 128KX36, 11ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100 | Cypress Semiconductor | CY7C1320JV18-250BZXI vs CY7C1345B-50AC |
CY7C1386FV25-250BGI | Cache SRAM, 512KX36, 2.6ns, CMOS, PBGA119, 14 X 22 MM, 2.40 MM HEIGHT, BGA-119 | Cypress Semiconductor | CY7C1320JV18-250BZXI vs CY7C1386FV25-250BGI |
CXK77N36R160GB-3 | Late-Write SRAM, 512KX36, 1.5ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, BGA-119 | Sony Semiconductor | CY7C1320JV18-250BZXI vs CXK77N36R160GB-3 |
K7I161884B-FC16 | DDR SRAM, 1MX18, 0.5ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FBGA-165 | Samsung Semiconductor | CY7C1320JV18-250BZXI vs K7I161884B-FC16 |
AS7C33128NTD36A-200BC | ZBT SRAM, 128KX36, 8.5ns, CMOS, PQFP100, 14 X 20 MM, TQFP-100 | Alliance Semiconductor Corporation | CY7C1320JV18-250BZXI vs AS7C33128NTD36A-200BC |
IS61QDPB21M18A-300B4 | QDR SRAM, 1MX18, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, LFBGA-165 | Integrated Silicon Solution Inc | CY7C1320JV18-250BZXI vs IS61QDPB21M18A-300B4 |
MCM69L738ZP9R | Late-Write SRAM, 128KX36, 10.5ns, BICMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, PLASTIC, BGA-119 | Motorola Semiconductor Products | CY7C1320JV18-250BZXI vs MCM69L738ZP9R |
71V3576YS150BGGI | Cache SRAM, 128KX36, 3.8ns, CMOS, PBGA119, ROHS COMPLIANT, BGA-119 | Integrated Device Technology Inc | CY7C1320JV18-250BZXI vs 71V3576YS150BGGI |