Part Details for CY7C1321KV18-333BZC by Cypress Semiconductor
Overview of CY7C1321KV18-333BZC by Cypress Semiconductor
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for CY7C1321KV18-333BZC
Part # | Distributor | Description | Stock | Price | Buy | |
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Rochester Electronics | DDR SRAM, 512KX36, 0.45ns, CMOS, PBGA165 ' RoHS: Not Compliant Status: Obsolete Min Qty: 1 | 142 |
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$26.3300 / $30.9800 | Buy Now |
Part Details for CY7C1321KV18-333BZC
CY7C1321KV18-333BZC CAD Models
CY7C1321KV18-333BZC Part Data Attributes
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CY7C1321KV18-333BZC
Cypress Semiconductor
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Datasheet
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CY7C1321KV18-333BZC
Cypress Semiconductor
DDR SRAM, 512KX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, MO-216BB0AC, FBGA-165
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | CYPRESS SEMICONDUCTOR CORP | |
Part Package Code | BGA | |
Package Description | 13 X 15 MM, 1.40 MM HEIGHT, MO-216BB0AC, FBGA-165 | |
Pin Count | 165 | |
Reach Compliance Code | not_compliant | |
ECCN Code | 3A991.B.2.A | |
HTS Code | 8542.32.00.41 | |
Access Time-Max | 0.45 ns | |
Additional Feature | PIPELINED ARCHITECTURE | |
Clock Frequency-Max (fCLK) | 333 MHz | |
I/O Type | COMMON | |
JESD-30 Code | R-PBGA-B165 | |
Length | 15 mm | |
Memory Density | 18874368 bit | |
Memory IC Type | DDR SRAM | |
Memory Width | 36 | |
Number of Functions | 1 | |
Number of Terminals | 165 | |
Number of Words | 524288 words | |
Number of Words Code | 512000 | |
Operating Mode | SYNCHRONOUS | |
Operating Temperature-Max | 70 °C | |
Operating Temperature-Min | ||
Organization | 512KX36 | |
Output Characteristics | 3-STATE | |
Package Body Material | PLASTIC/EPOXY | |
Package Code | LBGA | |
Package Equivalence Code | BGA165,11X15,40 | |
Package Shape | RECTANGULAR | |
Package Style | GRID ARRAY, LOW PROFILE | |
Parallel/Serial | SERIAL | |
Qualification Status | Not Qualified | |
Seated Height-Max | 1.4 mm | |
Standby Current-Max | 0.27 A | |
Standby Voltage-Min | 1.7 V | |
Supply Current-Max | 0.44 mA | |
Supply Voltage-Max (Vsup) | 1.9 V | |
Supply Voltage-Min (Vsup) | 1.7 V | |
Supply Voltage-Nom (Vsup) | 1.8 V | |
Surface Mount | YES | |
Technology | CMOS | |
Temperature Grade | COMMERCIAL | |
Terminal Form | BALL | |
Terminal Pitch | 1 mm | |
Terminal Position | BOTTOM | |
Width | 13 mm |
Alternate Parts for CY7C1321KV18-333BZC
This table gives cross-reference parts and alternative options found for CY7C1321KV18-333BZC. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CY7C1321KV18-333BZC, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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MCM69F817ZP6 | 256KX18 CACHE SRAM, 6ns, PBGA119, 7 X 17 MM, PLASTIC, BGA-119 | Motorola Mobility LLC | CY7C1321KV18-333BZC vs MCM69F817ZP6 |
IBM043640QLAA-6 | Standard SRAM, 128KX36, 7.5ns, CMOS, PBGA119, BGA-119 | IBM | CY7C1321KV18-333BZC vs IBM043640QLAA-6 |
IS61DDP2B21M36A-400B4L | DDR SRAM, 1MX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, LFBGA-165 | Integrated Silicon Solution Inc | CY7C1321KV18-333BZC vs IS61DDP2B21M36A-400B4L |
K7N401801A-TC160 | ZBT SRAM, 256KX18, 3.5ns, CMOS, PQFP100, 20 X 14 MM, TQFP-100 | Samsung Semiconductor | CY7C1321KV18-333BZC vs K7N401801A-TC160 |
K7P163612M-HC48 | Standard SRAM, 512KX36, 4.8ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, FLIP CHIP, BGA-119 | Samsung Semiconductor | CY7C1321KV18-333BZC vs K7P163612M-HC48 |
KM732V789H-67 | Cache SRAM, 128KX32, 3.8ns, CMOS, PBGA119, BGA-119 | Samsung Semiconductor | CY7C1321KV18-333BZC vs KM732V789H-67 |
IS61VPS10018-166TQ | Cache SRAM, 1MX18, 3.5ns, CMOS, PQFP100, TQFP-100 | Integrated Silicon Solution Inc | CY7C1321KV18-333BZC vs IS61VPS10018-166TQ |
IS61QDPB21M36A-333B4I | QDR SRAM, 1MX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, LFBGA-165 | Integrated Silicon Solution Inc | CY7C1321KV18-333BZC vs IS61QDPB21M36A-333B4I |
MCM69F817ZP6.5R | 256KX18 CACHE SRAM, 6.5ns, PBGA119, 7 X 17 MM, PLASTIC, BGA-119 | Motorola Mobility LLC | CY7C1321KV18-333BZC vs MCM69F817ZP6.5R |
K7I163684B-FC330 | DDR SRAM, 512KX36, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FBGA-165 | Samsung Semiconductor | CY7C1321KV18-333BZC vs K7I163684B-FC330 |