Part Details for CY7C1911KV18-333BZC by Cypress Semiconductor
Overview of CY7C1911KV18-333BZC by Cypress Semiconductor
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Internet of Things (IoT)
Computing and Data Storage
Price & Stock for CY7C1911KV18-333BZC
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
25T6963
|
Newark | Sync Srams/Tray |Cypress Infineon Technologies CY7C1911KV18-333BZC Min Qty: 680 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
Buy Now | |
|
|
Rochester Electronics | CY7C1911KV18 - QDR SRAM, 2MX9, 0.45ns, CMOS, PBGA165 ' RoHS: Not Compliant Status: Active Min Qty: 1 | 192 |
|
$28.9600 / $34.0700 | Buy Now |
Part Details for CY7C1911KV18-333BZC
CY7C1911KV18-333BZC CAD Models
CY7C1911KV18-333BZC Part Data Attributes
|
|
CY7C1911KV18-333BZC
Cypress Semiconductor
Buy Now
Datasheet
|
Compare Parts:
CY7C1911KV18-333BZC
Cypress Semiconductor
QDR SRAM, 2MX9, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1.40 MM HEIGHT, MO-216, FBGA-165
|
| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | CYPRESS SEMICONDUCTOR CORP | |
| Part Package Code | BGA | |
| Package Description | 13 X 15 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 | |
| Pin Count | 165 | |
| Reach Compliance Code | compliant | |
| ECCN Code | 3A991.B.2.A | |
| HTS Code | 8542.32.00.41 | |
| Access Time-Max | 0.45 ns | |
| Additional Feature | PIPELINED ARCHITECTURE | |
| Clock Frequency-Max (fCLK) | 333 MHz | |
| I/O Type | SEPARATE | |
| JESD-30 Code | R-PBGA-B165 | |
| JESD-609 Code | e0 | |
| Length | 15 mm | |
| Memory Density | 18874368 bit | |
| Memory IC Type | QDR SRAM | |
| Memory Width | 9 | |
| Moisture Sensitivity Level | 3 | |
| Number of Functions | 1 | |
| Number of Terminals | 165 | |
| Number of Words | 2097152 words | |
| Number of Words Code | 2000000 | |
| Operating Mode | SYNCHRONOUS | |
| Operating Temperature-Max | 70 °C | |
| Operating Temperature-Min | ||
| Organization | 2MX9 | |
| Output Characteristics | 3-STATE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Code | LBGA | |
| Package Equivalence Code | BGA165,11X15,40 | |
| Package Shape | RECTANGULAR | |
| Package Style | GRID ARRAY, LOW PROFILE | |
| Parallel/Serial | PARALLEL | |
| Peak Reflow Temperature (Cel) | 235 | |
| Qualification Status | Not Qualified | |
| Seated Height-Max | 1.4 mm | |
| Standby Current-Max | 0.27 A | |
| Standby Voltage-Min | 1.7 V | |
| Supply Current-Max | 0.52 mA | |
| Supply Voltage-Max (Vsup) | 1.9 V | |
| Supply Voltage-Min (Vsup) | 1.7 V | |
| Supply Voltage-Nom (Vsup) | 1.8 V | |
| Surface Mount | YES | |
| Technology | CMOS | |
| Temperature Grade | COMMERCIAL | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | BALL | |
| Terminal Pitch | 1 mm | |
| Terminal Position | BOTTOM | |
| Time@Peak Reflow Temperature-Max (s) | 20 | |
| Width | 13 mm |
Alternate Parts for CY7C1911KV18-333BZC
This table gives cross-reference parts and alternative options found for CY7C1911KV18-333BZC. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of CY7C1911KV18-333BZC, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| GS8161E36DGT-333V | Cache SRAM, 512KX36, 5ns, CMOS, PQFP100, TQFP-100 | GSI Technology | CY7C1911KV18-333BZC vs GS8161E36DGT-333V |
| GS8161E36DD-150 | Cache SRAM, 512KX36, 7.5ns, CMOS, PBGA165, FPBGA-165 | GSI Technology | CY7C1911KV18-333BZC vs GS8161E36DD-150 |
| IS61NVP25618A-200TQI | 256KX18 ZBT SRAM, 3.1ns, PQFP100, TQFP-100 | Integrated Silicon Solution Inc | CY7C1911KV18-333BZC vs IS61NVP25618A-200TQI |
| IS61VPD51236A-250TQI | 512KX36 CACHE SRAM, 2.6ns, PQFP100, TQFP-100 | Integrated Silicon Solution Inc | CY7C1911KV18-333BZC vs IS61VPD51236A-250TQI |
| 71V2556XS133BGI8 | ZBT SRAM, 128KX36, CMOS, PBGA119, BGA-119 | Integrated Device Technology Inc | CY7C1911KV18-333BZC vs 71V2556XS133BGI8 |
| 71V2558XS200PFG | TQFP-100, Tray | Integrated Device Technology Inc | CY7C1911KV18-333BZC vs 71V2558XS200PFG |
| K7M163645A-FI200 | ZBT SRAM, 512KX36, CMOS, PBGA165, FBGA-165 | Samsung Semiconductor | CY7C1911KV18-333BZC vs K7M163645A-FI200 |
| IS61NLP6436A-250TQI | 64KX36 ZBT SRAM, 2.6ns, PQFP100, TQFP-100 | Integrated Silicon Solution Inc | CY7C1911KV18-333BZC vs IS61NLP6436A-250TQI |
| GS8182Q09BD-300MT | QDR SRAM, 2MX9, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165 | GSI Technology | CY7C1911KV18-333BZC vs GS8182Q09BD-300MT |
| CY7C1243KV18-450BZC | QDR SRAM, 2MX18, 0.45ns, CMOS, PBGA165, FBGA-165 | Infineon Technologies AG | CY7C1911KV18-333BZC vs CY7C1243KV18-450BZC |