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D1006 by:

RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CERAMIC PACKAGE-6

Part Details for D1006 by Pointec Technology Co Ltd

Overview of D1006 by Pointec Technology Co Ltd

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Applications Consumer Electronics Space Technology Aerospace and Defense Energy and Power Systems Renewable Energy

Part Details for D1006

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D1006 Part Data Attributes

D1006 Pointec Technology Co Ltd
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D1006 Pointec Technology Co Ltd RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, CERAMIC PACKAGE-6
Part Life Cycle Code Contact Manufacturer
Ihs Manufacturer POINTEC TECHNOLOGY CO LTD
Package Description FLANGE MOUNT, R-CDFM-F6
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature LOW NOISE
Configuration SINGLE
DS Breakdown Voltage-Min 70 V
Drain Current-Max (ID) 30 A
FET Technology METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band ULTRA HIGH FREQUENCY BAND
JESD-30 Code R-CDFM-F6
Number of Elements 1
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Surface Mount YES
Terminal Form FLAT
Terminal Position DUAL
Transistor Application AMPLIFIER
Transistor Element Material SILICON

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