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D251N08B by:

Rectifier Diode, 1 Phase, 1 Element, 255A, 800V V(RRM), Silicon,

Part Details for D251N08B by Infineon Technologies AG

Overview of D251N08B by Infineon Technologies AG

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Applications Space Technology Aerospace and Defense

Part Details for D251N08B

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D251N08B Part Data Attributes

D251N08B Infineon Technologies AG
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D251N08B Infineon Technologies AG Rectifier Diode, 1 Phase, 1 Element, 255A, 800V V(RRM), Silicon,
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.10.00.80
Samacsys Manufacturer Infineon
Application POWER
Case Connection ANODE
Configuration SINGLE
Diode Element Material SILICON
Diode Type RECTIFIER DIODE
Forward Voltage-Max (VF) 1.57 V
JESD-30 Code O-XUPM-H1
Non-rep Pk Forward Current-Max 5300 A
Number of Elements 1
Number of Phases 1
Number of Terminals 1
Operating Temperature-Max 180 °C
Output Current-Max 255 A
Package Body Material UNSPECIFIED
Package Shape ROUND
Package Style POST/STUD MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Qualification Status Not Qualified
Rep Pk Reverse Voltage-Max 800 V
Surface Mount NO
Terminal Form HIGH CURRENT CABLE
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

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