There are no models available for this part yet.
Overview of DMC3730UVT-13 by Diodes Incorporated
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 3 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 0 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Consumer Electronics
Education and Research
Internet of Things (IoT)
Aerospace and Defense
Agriculture Technology
Robotics and Drones
Price & Stock for DMC3730UVT-13 by Diodes Incorporated
| Part # | Manufacturer | Description | Stock | Price | Buy | ||
|---|---|---|---|---|---|---|---|
|
DISTI #
DMC3730UVT-13-ND
|
DigiKey | MOSFET N/P-CH 25V 0.68A TSOT26 Min Qty: 10000 Lead time: 24 Weeks Container: Tape & Reel (TR) | Temporarily Out of Stock |
|
$0.0747 / $0.0908 | Buy Now | |
|
DISTI #
DMC3730UVT-13
|
Avnet Americas | Trans MOSFET Array N-CH/P-CH 25V/-25V 0.68A/-0.46A 6-Pin TSOT-26 T/R - Tape and Reel (Alt: DMC3730UVT-13) RoHS: Compliant Min Qty: 10000 Package Multiple: 10000 Lead time: 24 Weeks, 0 Days Container: Reel | 190000 Factory Stock |
|
$0.0880 | Buy Now | |
|
DISTI #
621-DMC3730UVT-13
|
Mouser Electronics | MOSFETs 25V Complimentary Pair Enhancemnt Mode RoHS: Compliant | 0 |
|
$0.0860 / $0.0900 | Order Now |
CAD Models for DMC3730UVT-13 by Diodes Incorporated
Part Data Attributes for DMC3730UVT-13 by Diodes Incorporated
|
|
|
|---|---|
|
Rohs Code
|
Yes
|
|
Part Life Cycle Code
|
Active
|
|
Ihs Manufacturer
|
DIODES INC
|
|
Package Description
|
SMALL OUTLINE, R-PDSO-G6
|
|
Reach Compliance Code
|
compliant
|
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ECCN Code
|
EAR99
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Factory Lead Time
|
24 Weeks
|
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Date Of Intro
|
2018-07-10
|
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Additional Feature
|
ESD PROTECTED, HIGH RELIABILITY
|
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Configuration
|
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
|
|
DS Breakdown Voltage-Min
|
25 V
|
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Drain Current-Max (ID)
|
0.46 A
|
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Drain-source On Resistance-Max
|
1.1 Ω
|
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FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
|
JESD-30 Code
|
R-PDSO-G6
|
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JESD-609 Code
|
e3
|
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Moisture Sensitivity Level
|
1
|
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Number of Elements
|
2
|
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Number of Terminals
|
6
|
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Operating Mode
|
ENHANCEMENT MODE
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Operating Temperature-Max
|
175 °C
|
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Operating Temperature-Min
|
-55 °C
|
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Package Body Material
|
PLASTIC/EPOXY
|
|
Package Shape
|
RECTANGULAR
|
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Package Style
|
SMALL OUTLINE
|
|
Peak Reflow Temperature (Cel)
|
260
|
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Polarity/Channel Type
|
N-CHANNEL AND P-CHANNEL
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Power Dissipation-Max (Abs)
|
0.9 W
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Surface Mount
|
YES
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Terminal Finish
|
MATTE TIN
|
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Terminal Form
|
GULL WING
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Terminal Position
|
DUAL
|
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Time@Peak Reflow Temperature-Max (s)
|
30
|
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Transistor Application
|
SWITCHING
|
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Transistor Element Material
|
SILICON
|