Part Details for DMN62D2UQ-7 by Diodes Incorporated
Overview of DMN62D2UQ-7 by Diodes Incorporated
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for DMN62D2UQ-7
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
31-DMN62D2UQ-7TR-ND
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DigiKey | 2N7002 FAMILY SOT23 T&R 3K Min Qty: 3000 Lead time: 8 Weeks Container: Tape & Reel (TR) | Temporarily Out of Stock |
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$0.0364 / $0.0601 | Buy Now |
DISTI #
DMN62D2UQ-7
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Avnet Americas | Power MOSFET, N Channel, 60 V, 390 mA, 2 Ohm, SOT-23, 3 Pins, Surface Mount - Tape and Reel (Alt: DMN62D2UQ-7) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 8 Weeks, 0 Days Container: Reel | 150000 Factory Stock |
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$0.0493 | Buy Now |
DISTI #
621-DMN62D2UQ-7
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Mouser Electronics | MOSFETs 2N7002 Family SOT23 T&R 3K RoHS: Compliant | 2066 |
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$0.0360 / $0.3800 | Buy Now |
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Future Electronics | RoHS: Not Compliant pbFree: No Min Qty: 3000 Package Multiple: 3000 Lead time: 8 Weeks | 0 |
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$0.0383 | Buy Now |
Part Details for DMN62D2UQ-7
DMN62D2UQ-7 CAD Models
DMN62D2UQ-7 Part Data Attributes
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DMN62D2UQ-7
Diodes Incorporated
Buy Now
Datasheet
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DMN62D2UQ-7
Diodes Incorporated
Small Signal Field-Effect Transistor, 0.39A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN
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Part Life Cycle Code | Active | |
Ihs Manufacturer | DIODES INC | |
Package Description | SOT-23, 3 PIN | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Factory Lead Time | 8 Weeks | |
Samacsys Manufacturer | Diodes Incorporated | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 0.39 A | |
Drain-source On Resistance-Max | 4 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 4.2 pF | |
JESD-30 Code | R-PDSO-G3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 0.6 W | |
Reference Standard | AEC-Q101; IATF 16949; MIL-STD-202 | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |