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Part Details for DMN65D8LFB-7 by Diodes Incorporated
Overview of DMN65D8LFB-7 by Diodes Incorporated
- Distributor Offerings: (7 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Energy and Power Systems
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Price & Stock for DMN65D8LFB-7
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
DMN65D8LFB-7DICT-ND
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DigiKey | MOSFET N-CH 60V 260MA 3DFN Min Qty: 1 Lead time: 8 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
18602 In Stock |
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$0.0324 / $0.3300 | Buy Now |
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DISTI #
DMN65D8LFB-7
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Avnet Americas | MOSFET BVDSS: 61V~100V X1-DFN1006-3 T&R 3K - Tape and Reel (Alt: DMN65D8LFB-7) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 8 Weeks, 0 Days Container: Reel | 90001302000 Factory Stock |
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$0.0254 / $0.0300 | Buy Now |
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DISTI #
621-DMN65D8LFB-7
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Mouser Electronics | MOSFET 60V N-Ch Dual Enh 20Vgss 300mW Pd RoHS: Compliant | 76673 |
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$0.0300 / $0.3300 | Buy Now |
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Future Electronics | MOSFET BVDSS: 61V~100V X1-DFN1006-3 T&R 3K RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 8 Weeks Container: Reel | 0Reel |
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$0.0253 / $0.0294 | Buy Now |
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Future Electronics | MOSFET BVDSS: 61V~100V X1-DFN1006-3 T&R 3K RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 8 Weeks Container: Reel | 0Reel |
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$0.0253 / $0.0294 | Buy Now |
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DISTI #
DMN65D8LFB-7
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TME | Transistor: N-MOSFET, unipolar, 60V, 310mA, 840mW, X1-DFN1006-3 Min Qty: 20 | 0 |
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$0.0320 / $0.0516 | RFQ |
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DISTI #
DMN65D8LFB-7
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Avnet Silica | MOSFET BVDSS: 61V~100V X1-DFN1006-3 T&R 3K (Alt: DMN65D8LFB-7) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 10 Weeks, 0 Days | Silica - 3000 |
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Buy Now |
Part Details for DMN65D8LFB-7
DMN65D8LFB-7 CAD Models
DMN65D8LFB-7 Part Data Attributes
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DMN65D8LFB-7
Diodes Incorporated
Buy Now
Datasheet
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Compare Parts:
DMN65D8LFB-7
Diodes Incorporated
Small Signal Field-Effect Transistor, 0.26A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, X1-DFN1006-3, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | DIODES INC | |
| Part Package Code | DFN | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 8 Weeks | |
| Samacsys Manufacturer | Diodes Incorporated | |
| Additional Feature | HIGH RELIABILITY | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 0.26 A | |
| Drain-source On Resistance-Max | 4 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PBCC-N3 | |
| JESD-609 Code | e4 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | CHIP CARRIER | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 0.84 W | |
| Surface Mount | YES | |
| Terminal Finish | NICKEL PALLADIUM GOLD | |
| Terminal Form | NO LEAD | |
| Terminal Position | BOTTOM | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |