Datasheets
DMNH6022SSD-13 by: Diodes Incorporated

Power Field-Effect Transistor, 7.1A I(D), 60V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8

Part Details for DMNH6022SSD-13 by Diodes Incorporated

Overview of DMNH6022SSD-13 by Diodes Incorporated

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Applications Industrial Automation Renewable Energy Robotics and Drones

Price & Stock for DMNH6022SSD-13

Part # Distributor Description Stock Price Buy
DISTI # 31-DMNH6022SSD-13CT-ND
DigiKey MOSFET 2N-CH 60V 7.1A/22.6A 8SO Min Qty: 1 Lead time: 8 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) 4975
In Stock
  • 1 $0.8400
  • 10 $0.6870
  • 100 $0.5345
  • 500 $0.4530
  • 1,000 $0.3690
  • 2,500 $0.3474
  • 5,000 $0.3309
  • 12,500 $0.3156
  • 25,000 $0.3150
$0.3150 / $0.8400 Buy Now
DISTI # DMNH6022SSD-13
Avnet Americas Transistor MOSFET Array Dual N-Channel 60V 22.6A 8-Pin SO T/R - Tape and Reel (Alt: DMNH6022SSD-13) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 8 Weeks, 0 Days Container: Reel 10000 Factory Stock
  • 2,500 $0.3692
  • 5,000 $0.3559
  • 10,000 $0.3452
  • 15,000 $0.3352
  • 20,000 $0.3226
  • 25,000 $0.3175
  • 250,000 $0.3125
$0.3125 / $0.3692 Buy Now
DISTI # 621-DMNH6022SSD-13
Mouser Electronics MOSFET MOSFET BVDSS: 41V-60V 0
  • 1 $0.8400
  • 10 $0.6870
  • 100 $0.5350
  • 500 $0.4530
  • 1,000 $0.3700
  • 2,500 $0.3600
$0.3600 / $0.8400 Order Now
Future Electronics Mosfet Array 2 N-Channel (Dual) 60V 7.1A, 22.6A 1.5W Surface Mount 8-SO RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel 2500
Reel
  • 2,500 $0.3050
  • 5,000 $0.3000
  • 7,500 $0.2900
$0.2900 / $0.3050 Buy Now
Future Electronics Mosfet Array 2 N-Channel (Dual) 60V 7.1A, 22.6A 1.5W Surface Mount 8-SO RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel 0
Reel
  • 2,500 $0.3450
  • 5,000 $0.3400
  • 7,500 $0.3350
  • 10,000 $0.3300
  • 12,500 $0.3250
$0.3250 / $0.3450 Buy Now
DISTI # DMNH6022SSD-13
Avnet Americas Transistor MOSFET Array Dual N-Channel 60V 22.6A 8-Pin SO T/R - Tape and Reel (Alt: DMNH6022SSD-13) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 8 Weeks, 0 Days Container: Reel 10000 Factory Stock
  • 2,500 $0.3692
  • 5,000 $0.3559
  • 10,000 $0.3452
  • 15,000 $0.3352
  • 20,000 $0.3226
  • 25,000 $0.3175
  • 250,000 $0.3125
$0.3125 / $0.3692 Buy Now
DISTI # DMNH6022SSD-13
Avnet Americas Transistor MOSFET Array Dual N-Channel 60V 22.6A 8-Pin SO T/R - Tape and Reel (Alt: DMNH6022SSD-13) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 8 Weeks, 0 Days Container: Reel 10000 Factory Stock
  • 2,500 $0.3692
  • 5,000 $0.3559
  • 10,000 $0.3452
  • 15,000 $0.3352
  • 20,000 $0.3226
  • 25,000 $0.3175
  • 250,000 $0.3125
$0.3125 / $0.3692 Buy Now
DISTI # DMNH6022SSD-13
Avnet Silica Transistor MOSFET Array Dual N-Channel 60V 22.6A 8-Pin SO T/R (Alt: DMNH6022SSD-13) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 1 Weeks, 3 Days Silica - 0
Buy Now
New Advantage Corporation   RoHS: Compliant Min Qty: 1 Package Multiple: 2500 5000
  • 2,500 $0.4143
  • 5,000 $0.3867
$0.3867 / $0.4143 Buy Now

Part Details for DMNH6022SSD-13

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DMNH6022SSD-13 Part Data Attributes

DMNH6022SSD-13 Diodes Incorporated
Buy Now Datasheet
Compare Parts:
DMNH6022SSD-13 Diodes Incorporated Power Field-Effect Transistor, 7.1A I(D), 60V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer DIODES INC
Package Description SOP-8
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 8 Weeks
Additional Feature HIGH RELIABILITY
Avalanche Energy Rating (Eas) 24 mJ
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 7.1 A
Drain-source On Resistance-Max 0.03 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 45 A
Reference Standard AEC-Q101
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for DMNH6022SSD-13

This table gives cross-reference parts and alternative options found for DMNH6022SSD-13. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of DMNH6022SSD-13, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SI4946BEY-T1-GE3 Power Field-Effect Transistor, 5.3A I(D), 60V, 0.052ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8 Vishay Siliconix DMNH6022SSD-13 vs SI4946BEY-T1-GE3
SI4946BEY-T1-E3 Power Field-Effect Transistor, 5.3A I(D), 60V, 0.052ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOP-8 Vishay Siliconix DMNH6022SSD-13 vs SI4946BEY-T1-E3
SI4946BEY-T1-E3 Power Field-Effect Transistor, 6.5A I(D), 60V, 0.041ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, MS-012, SOIC, SOP-8 Vishay Intertechnologies DMNH6022SSD-13 vs SI4946BEY-T1-E3
Part Number Description Manufacturer Compare
SI4946EY-T1 Power Field-Effect Transistor, 4.5A I(D), 60V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Vishay Siliconix DMNH6022SSD-13 vs SI4946EY-T1
SI4946BEY-T1-E3 Power Field-Effect Transistor, 5.3A I(D), 60V, 0.052ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOP-8 Vishay Siliconix DMNH6022SSD-13 vs SI4946BEY-T1-E3
SQ4946AEY-T1-GE3 TRANSISTOR 7000 mA, 60 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8, FET General Purpose Small Signal Vishay Siliconix DMNH6022SSD-13 vs SQ4946AEY-T1-GE3
SI4946EY-T1-E3 Power Field-Effect Transistor, 4.5A I(D), 60V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8 Vishay Siliconix DMNH6022SSD-13 vs SI4946EY-T1-E3
SI4946BEY-T1-GE3 Power Field-Effect Transistor, 5.3A I(D), 60V, 0.052ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8 Vishay Siliconix DMNH6022SSD-13 vs SI4946BEY-T1-GE3
SQ4946AEY-T1_GE3 Small Signal Field-Effect Transistor, 7A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8 Vishay Intertechnologies DMNH6022SSD-13 vs SQ4946AEY-T1_GE3
SI4946EY-E3 Power Field-Effect Transistor, 4.5A I(D), 60V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8 Vishay Siliconix DMNH6022SSD-13 vs SI4946EY-E3
SI4946BEY-T1-E3 Power Field-Effect Transistor, 6.5A I(D), 60V, 0.041ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, MS-012, SOIC, SOP-8 Vishay Intertechnologies DMNH6022SSD-13 vs SI4946BEY-T1-E3
SI4946EY Power Field-Effect Transistor, 4.5A I(D), 60V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Vishay Siliconix DMNH6022SSD-13 vs SI4946EY

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