Part Details for DMP1009UFDFQ-13 by Diodes Incorporated
Overview of DMP1009UFDFQ-13 by Diodes Incorporated
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for DMP1009UFDFQ-13
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
DMP1009UFDFQ-13DI-ND
|
DigiKey | MOSFET P-CH 12V 11A 6UDFN Min Qty: 10000 Lead time: 28 Weeks Container: Tape & Reel (TR) | Temporarily Out of Stock |
|
$0.1777 / $0.1867 | Buy Now |
|
DISTI #
DMP1009UFDFQ-13
|
Avnet Americas | Transistor MOSFET P-CH 12V 11A 6-Pin 6uDFN2020 T/R - Tape and Reel (Alt: DMP1009UFDFQ-13) RoHS: Compliant Min Qty: 10000 Package Multiple: 10000 Lead time: 28 Weeks, 0 Days Container: Reel | 0 |
|
$0.1411 / $0.1667 | Buy Now |
|
DISTI #
621-DMP1009UFDFQ-13
|
Mouser Electronics | MOSFET MOSFET BVDSS: 8V~24V U-DFN2020-6 T&R 10K RoHS: Compliant | 0 |
|
$0.1870 | Order Now |
Part Details for DMP1009UFDFQ-13
DMP1009UFDFQ-13 CAD Models
DMP1009UFDFQ-13 Part Data Attributes
|
|
DMP1009UFDFQ-13
Diodes Incorporated
Buy Now
Datasheet
|
Compare Parts:
DMP1009UFDFQ-13
Diodes Incorporated
Small Signal Field-Effect Transistor,
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | DIODES INC | |
| Reach Compliance Code | compliant | |
| Factory Lead Time | 28 Weeks | |
| Samacsys Manufacturer | Diodes Incorporated | |
| Additional Feature | HIGH RELIABILITY | |
| Avalanche Energy Rating (Eas) | 31 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 12 V | |
| Drain Current-Max (ID) | 11 A | |
| Drain-source On Resistance-Max | 0.014 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 416 pF | |
| JESD-30 Code | S-PDSO-N6 | |
| JESD-609 Code | e4 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 6 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | SQUARE | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 2 W | |
| Pulsed Drain Current-Max (IDM) | 70 A | |
| Reference Standard | AEC-Q101; MIL-STD-202 | |
| Surface Mount | YES | |
| Terminal Finish | Nickel/Palladium/Gold (Ni/Pd/Au) | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |