| Part # | Manufacturer | Description | Stock | Price | Buy | ||
|---|---|---|---|---|---|---|---|
|
DISTI #
28AK8767
|
Newark | Mosfet, P-Ch, 30V, 3.3A, Sot-23 Rohs Compliant: Yes |Diodes Inc. DMP3165L-7 RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 2840 |
|
$0.0930 / $0.3740 | Buy Now | |
|
DISTI #
31-DMP3165L-7CT-ND
|
DigiKey | MOSFET P-CH 30V 3.3A SOT23 T&R Min Qty: 1 Lead time: 8 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
2023 In Stock |
|
$0.0564 / $0.3600 | Buy Now | |
|
DISTI #
DMP3165L-7
|
Avnet Americas | Trans MOSFET P-CH -30V -3.3A 3-Pin SOT-23 SMD T/R - Tape and Reel (Alt: DMP3165L-7) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 8 Weeks, 0 Days Container: Reel | 282000 Factory Stock |
|
$0.0392 | Buy Now | |
|
DISTI #
621-DMP3165L-7
|
Mouser Electronics | MOSFETs MOSFET BVDSS: 25V-30V SOT23 T&R 3K RoHS: Compliant | 7666 |
|
$0.0650 / $0.3600 | Buy Now | |
|
DISTI #
DMP3165L-7
|
TME | Transistor: P-MOSFET, unipolar, -30V, -2.7A, Idm: -13A, 1.3W, SOT23 Min Qty: 1 | 0 |
|
$0.0681 / $0.3126 | RFQ | |
|
DISTI #
DMP3165L-7
|
Avnet Asia | Trans MOSFET P-CH -30V -3.3A 3-Pin SOT-23 SMD T/R (Alt: DMP3165L-7) RoHS: Compliant Min Qty: 6000 Package Multiple: 3000 Lead time: 8 Weeks, 0 Days | 0 |
|
$0.0345 / $0.0386 | Buy Now | |
|
DISTI #
DMP3165L-7
|
Avnet Silica | Trans MOSFET P-CH -30V -3.3A 3-Pin SOT-23 SMD T/R (Alt: DMP3165L-7) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 10 Weeks, 0 Days | Silica - 3000 |
|
Buy Now | ||
| LCSC | 30V 3.3A 90m2.7A10V 800mW 2.1V250uA 1 Piece P-Channel SOT-23 MOSFETs ROHS | 2455 |
|
$0.0752 / $0.1077 | Buy Now | ||
| New Advantage Corporation | RoHS: Compliant Min Qty: 1 Package Multiple: 3000 | 3000 |
|
$0.0815 | Buy Now |
|
|
|
|---|---|
|
Rohs Code
|
Yes
|
|
Part Life Cycle Code
|
Active
|
|
Ihs Manufacturer
|
DIODES INC
|
|
Reach Compliance Code
|
compliant
|
|
ECCN Code
|
EAR99
|
|
Factory Lead Time
|
8 Weeks
|
|
Samacsys Manufacturer
|
Diodes Incorporated
|
|
Configuration
|
SINGLE WITH BUILT-IN DIODE
|
|
DS Breakdown Voltage-Min
|
30 V
|
|
Drain Current-Max (ID)
|
3.3 A
|
|
Drain-source On Resistance-Max
|
0.09 Ω
|
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
|
Feedback Cap-Max (Crss)
|
35 pF
|
|
JESD-30 Code
|
R-PDSO-G3
|
|
JESD-609 Code
|
e3
|
|
Moisture Sensitivity Level
|
1
|
|
Number of Elements
|
1
|
|
Number of Terminals
|
3
|
|
Operating Mode
|
ENHANCEMENT MODE
|
|
Operating Temperature-Max
|
150 °C
|
|
Operating Temperature-Min
|
-55 °C
|
|
Package Body Material
|
PLASTIC/EPOXY
|
|
Package Shape
|
RECTANGULAR
|
|
Package Style
|
SMALL OUTLINE
|
|
Peak Reflow Temperature (Cel)
|
260
|
|
Polarity/Channel Type
|
P-CHANNEL
|
|
Power Dissipation-Max (Abs)
|
1.3 W
|
|
Pulsed Drain Current-Max (IDM)
|
13 A
|
|
Reference Standard
|
MIL-STD-202
|
|
Surface Mount
|
YES
|
|
Terminal Finish
|
MATTE TIN
|
|
Terminal Form
|
GULL WING
|
|
Terminal Position
|
DUAL
|
|
Transistor Application
|
SWITCHING
|
|
Transistor Element Material
|
SILICON
|
