Part Details for DMT35M4LFDF-13 by Diodes Incorporated
Overview of DMT35M4LFDF-13 by Diodes Incorporated
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Internet of Things (IoT)
Environmental Monitoring
Financial Technology (Fintech)
Smart Cities
Transportation and Logistics
Agriculture Technology
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Telecommunications
Automotive
Education and Research
Consumer Electronics
Security and Surveillance
Audio and Video Systems
Computing and Data Storage
Healthcare
Entertainment and Gaming
Price & Stock for DMT35M4LFDF-13
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
31-DMT35M4LFDF-13TR-ND
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DigiKey | MOSFET BVDSS: 25V~30V U-DFN2020- Min Qty: 10000 Lead time: 24 Weeks Container: Tape & Reel (TR) | Temporarily Out of Stock |
|
$0.1383 / $0.1521 | Buy Now |
DISTI #
DMT35M4LFDF-13
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Avnet Americas | MOSFET Enhancement N-Channel 30V 6-Pin U-DFN2020 T/R - Tape and Reel (Alt: DMT35M4LFDF-13) RoHS: Compliant Min Qty: 10000 Package Multiple: 10000 Lead time: 24 Weeks, 0 Days Container: Reel | 0 |
|
$0.1445 | Buy Now |
DISTI #
621-DMT35M4LFDF-13
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Mouser Electronics | MOSFETs MOSFET BVDSS: 25V-30V U-DFN2020-6 T&R 10K RoHS: Compliant | 0 |
|
$0.1380 / $0.1490 | Order Now |
Part Details for DMT35M4LFDF-13
DMT35M4LFDF-13 CAD Models
DMT35M4LFDF-13 Part Data Attributes
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DMT35M4LFDF-13
Diodes Incorporated
Buy Now
Datasheet
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DMT35M4LFDF-13
Diodes Incorporated
Small Signal Field-Effect Transistor,
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | DIODES INC | |
Package Description | SMALL OUTLINE, S-PDSO-N6 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Factory Lead Time | 24 Weeks | |
Date Of Intro | 2019-11-01 | |
Samacsys Manufacturer | Diodes Incorporated | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 13 A | |
Drain-source On Resistance-Max | 0.0069 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | S-PDSO-N6 | |
JESD-609 Code | e4 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 6 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | SQUARE | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 1.7 W | |
Surface Mount | YES | |
Terminal Finish | NICKEL PALLADIUM GOLD | |
Terminal Form | NO LEAD | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |