Part Details for DMT35M7LFV-13 by Diodes Incorporated
Overview of DMT35M7LFV-13 by Diodes Incorporated
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for DMT35M7LFV-13
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
DMT35M7LFV-13-ND
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DigiKey | MOSFET N-CH 30V 76A POWERDI3333 Min Qty: 3000 Lead time: 28 Weeks Container: Tape & Reel (TR) | Temporarily Out of Stock |
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$0.2362 / $0.2749 | Buy Now |
DISTI #
DMT35M7LFV-13
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Avnet Americas | N-Channel Enhancement Mode MOSFET 30V 76A 8-Pin PowerDI3333 T/R - Tape and Reel (Alt: DMT35M7LFV-13) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 28 Weeks, 0 Days Container: Reel | 9000 Factory Stock |
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$0.2874 | Buy Now |
DISTI #
621-DMT35M7LFV-13
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Mouser Electronics | MOSFETs MOSFET BVDSS: 25V-30V RoHS: Compliant | 3000 |
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$0.2360 / $0.7100 | Buy Now |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Lead time: 28 Weeks | 0 |
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$0.2490 | Buy Now |
DISTI #
DMT35M7LFV-13
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Avnet Silica | N-Channel Enhancement Mode MOSFET 30V 76A 8-Pin PowerDI3333 T/R (Alt: DMT35M7LFV-13) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 30 Weeks, 0 Days | Silica - 0 |
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Buy Now |
Part Details for DMT35M7LFV-13
DMT35M7LFV-13 CAD Models
DMT35M7LFV-13 Part Data Attributes
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DMT35M7LFV-13
Diodes Incorporated
Buy Now
Datasheet
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DMT35M7LFV-13
Diodes Incorporated
Small Signal Field-Effect Transistor,
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | DIODES INC | |
Package Description | POWERDI3333-8 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Factory Lead Time | 28 Weeks | |
Samacsys Manufacturer | Diodes Incorporated | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain-source On Resistance-Max | 0.005 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 534 pF | |
JESD-30 Code | S-PDSO-F5 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 5 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | SQUARE | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 1.98 W | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |